Kamiyama Satoshi | Semiconductor Leading Edge Technologies Inc.

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著作論文

High-resolution RBS analysis of Si-dielectrics interfaces
Optical Gain of Wurtzite GaN/AlGaN Quantum Well Lasers
Optical Gain Calculation of Wurtzite GaN/AlGaN Quantum Well Laser
Role of Nitrogen Incorporation into Hf-Based High-k Gate Dielectrics for Termination of Local Current Leakage Paths
Strain Effect on 630 nm GaInP/AlGaInP Multi-Quantum Well Lasers
Study of a Negative Threshold Voltage Shift in Positive Bias Temperature Instability and a Positive Threshold Voltage Shift the Negative Bias Temperature Instability of Yttrium-Doped HfO2 Gate Dielectrics
Improvement of Device Characteristics for TiN Gate p-Type Metal–Insulator–Semiconductor Field-Effect Transistor with Al2O3-Capped HfO2 Dielectrics by Controlling Al2O3 Diffusion Annealing Process
Self-Sustained Pulsation in 650nm-Band AlGaInP Visible Laser Diodes with Highly Doped Saturable Absorbing Layer
Characterization of Metal/High-$k$ Structures Using Monoenergetic Positron Beams
Role of Nitrogen Incorporation into Hf-Based High-$k$ Gate Dielectrics for Termination of Local Current Leakage Paths

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