Nabatame Toshihide | Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan

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概要

関連著者

Eimori Takahisa
Semiconductor Leading Edge Technologies Inc.
Kamiyama Satoshi
Semiconductor Leading Edge Technologies Inc.
Matsuki Takeo
Semiconductor Leading Edge Technologies Inc. (selete)
Ohji Yuzuru
Semiconductor & Integrated Circuits Division Hitachi Ltd.
Nara Yasuo
Semiconductor Leading Edge Technologies Inc.
Eimori Takahisa
Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
Mise Nobuyuki
Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
Morooka Tetsu
Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
Nabatame Toshihide
Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
Nabatame Toshihide
Semiconductor Leading Edge Technologies Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
Matsuki Takeo
Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
Kamiyama Satoshi
Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan

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著作論文

Improvement of Device Characteristics for TiN Gate p-Type Metal–Insulator–Semiconductor Field-Effect Transistor with Al2O3-Capped HfO2 Dielectrics by Controlling Al2O3 Diffusion Annealing Process

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