Kamiyama Satoshi | Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
スポンサーリンク
概要
- Kamiyama Satoshiの詳細を見る
- 同名の論文著者
- Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japanの論文著者
関連著者
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Kamiyama Satoshi
Semiconductor Leading Edge Technologies Inc.
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Kamiyama Satoshi
Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Umezawa Naoto
National Inst. For Materials Sci. Ibaraki Jpn
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Eimori Takahisa
Semiconductor Leading Edge Technologies Inc.
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Yasutake Kiyoshi
Department Of Material And Life Science Graduate School Of Engineering Osaka University
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Matsuki Takeo
Semiconductor Leading Edge Technologies Inc. (selete)
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ARIKADO Tsunetoshi
Semiconductor Leading Edge Technologies Inc.
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Ohji Yuzuru
Semiconductor & Integrated Circuits Division Hitachi Ltd.
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Watanabe Heiji
Department Of Material And Life Science Graduate School Of Engineering Osaka University
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Watanabe Yasumasa
Department Of Chemical Pharmacology Faculty Of Pharmaceutical Sciences The University Of Tokyo
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Nara Yasuo
Semiconductor Leading Edge Technologies Inc.
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Yamada Keisaku
Nanotechnology Research Laboratories Waseda University
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Chikyow Toyohiro
National Inst. Materials Sci. Ibaraki Jpn
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Yoshida Shiniti
Department Of Precision Science And Technology Graduate School Of Engineering Osaka University
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Shiraishi Kenji
Institute Of Physics University Of Tsukuba
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Yamada Keisaku
Nanotechnology Research Laboratories, Waseda University, 120-5-308 Waseda-Tsurumaki, Shinjuku, Tokyo 162-0041, Japan
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Eimori Takahisa
Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Chikyow Toyohiro
National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0047, Japan
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Mise Nobuyuki
Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Morooka Tetsu
Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Nabatame Toshihide
Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Nabatame Toshihide
Semiconductor Leading Edge Technologies Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Umezawa Naoto
National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0047, Japan
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Matsuki Takeo
Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Shiraishi Kenji
Institute of Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8571, Japan
著作論文
- Improvement of Device Characteristics for TiN Gate p-Type Metal–Insulator–Semiconductor Field-Effect Transistor with Al2O3-Capped HfO2 Dielectrics by Controlling Al2O3 Diffusion Annealing Process
- Role of Nitrogen Incorporation into Hf-Based High-$k$ Gate Dielectrics for Termination of Local Current Leakage Paths