Correlation between Light-Induced Degradation and Structural Inhomogeneities in Hydrogenated Amorphous Silicon Prepared under High-Rate Deposition Conditions

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概要

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• The structural inhomogeneities of hydrogenated amorphous silicon (a-Si:H) prepared at high-deposition rates (20–27 Å/s) have been studied by the small angle X-ray scattering (SAXS) technique by changing the rf-electrode (cathode) bias voltages for controlling the ion flux impinging on the growing film surface. The total bonded hydrogen contents of the deposited films are independent of dc-bias, while light-induced degradation is significantly suppressed at the cathode bias Vc=+25 V. It is found that structural fluctuation in the range of 10–400 Å as evaluated by SAXS is reduced to about one half at Vc=+25 V in comparison with that of conventional deposition conditions at a rate of ∼1 Å/s.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 1998-02-15

著者

• Tamao Masaki

  Department Of Electrical Engineering Hiroshima University

• Hirose Masataka

  Department Of Electrical Engineering Faculty Of Engineering Hiroshima University

• Sakikawa Nobuki

  Department Of Electrical Engineering Hiroshima University

• Hirose Masataka

  Department of Electrical Engineering, Hiroshima University, 1-4-1 Kagamiyama, Higashi-Hiroshima 739, Japan

• Miyazaki Seiichi

  Department of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan

• Tamao Masaki

  Department of Electrical Engineering, Hiroshima University, 1-4-1 Kagamiyama, Higashi-Hiroshima 739, Japan

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