Coordination Number of Doped Boron Atoms in Photochemically-Deposited Amorphous Silicon Studied by X-Ray Photoelectron Spectroscopy
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概要
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A new insight on the chemical bonding features of doped boron atoms in hydrogenated amorphous silicon (a-Si:H) has been obtained from a chemical shift in the binding energy of B(1s) core level electrons. It was found that the B(1s) X-ray photoelectron spectrum can be deconvoluted to the two Gaussian peaks at energies of 186.6 and 187.7 eV, which are respectively attributed to electrons emitted from three- and four-fold coordinated boron atoms in silicon matrix. The conductivity is clearly correlated with the concentration of four-fold coordinated boron atoms.
- 社団法人応用物理学会の論文
- 1986-01-20
著者
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Hirose Masataka
Department Of Electrical Engineering Faculty Of Engineering Hiroshima University
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KAZAHAYA Tomio
Department of Electrical Engineering, Hiroshima University
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Kazahaya Tomio
Department Of Electrical Engineering Hiroshima University
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