Initial Stage of Laser-Induced Selective Chemical Vapor Deposition of Silicon
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概要
- 論文の詳細を見る
Spatially selective chemical vapor deposition has been achieved by ArF excimer laser (193 nm) irradiation through a metal mask in a Si_2H_6 + He gas mixture. The selective deposition kinetics has been found to be controlled by a nonthermal process and has been explained in terms of the Langmuir-Hinshelwood mechanism. Both surface migration of adsorbed radicals and desorption of reaction products appear to be enhanced with the laser irradiation, leading to a selective nucleation of silicon.
- 社団法人応用物理学会の論文
- 1987-12-20
著者
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Deguchi Koji
Department Of Electrical Engineering Hiroshima University
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Hirose Masataka
Department Of Electrical Engineering Faculty Of Engineering Hiroshima University
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Tanaka Takeshi
Department Of Biomedical Chemistry Graduate School Of Medicine The University Of Tokyo
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Tanaka Takeshi
Department Of Electrical Engineering Hiroshima University
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