Light Source System for Ruby Laser
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1962-12-15
著者
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UMENO Masataka
Department of Precision Engineering, Faculty of Engineering, Osaka University
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Suzuki Tatsuro
Department Of Applied Physics Faculty Of Engineering Osaka University
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Umeno Masataka
Department Of Applied Physics Faculty Of Engineering Osaka University
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Shinoda Gunji
Department Of Applied Physics Faculty Of Engineering Osaka University
関連論文
- Measurement of Residual Stress in Bent Silicon Wafers by Means of Photoluminescence
- Oxygen-Related Donors Stable at 700-800℃ in CZ-Si Crystals
- Oxygen-Related Donors Generated at 800℃ in CZ-Si
- Formation of Thin Oxide Films on Room-Temperature Silicon (100) by Exposure to a Neutral Beam of Hyperthermal Atomic and Molecular Oxygen
- Oxidation Properties of Hydrogen-Terminated SI (001) Surfaces Following Use of a Hyperthermal Broad Atomic Oxygen Beam at Low Temperatures : Instrumentation, Measurement, and Fabrication Technology
- Optical Probing for Detecting Surface Displacement Profile of Ultrasound Vibrations : Fundamentals
- Finite Element Simulation of Local Vibration of a Piezoelectric Plate Considering Energy Losses : General Ultrasonics
- A Very-High-Conductivity of In-Doped CdTe Film : Surfaces, Interfaces and Films
- In Doping in CdTe Film by Co-Evaporation of CdTe and In
- Restoration of Diffraction-Limited Noisy Images by Method of Least Squares
- Applicatiotn of the Nonlinear Filtering to the Contrast Enhancement of the Image of the Dislocation Observed by an Electron Microscope
- Organ and Cellular Localization of Asparagine Synthetase in Rice Plants
- New Type Interference Selective Modulation Spectroscopy : Spectroscopy
- Photoelectron Counting Statistics of Light Transmitted through Multimode Optical Fiber
- Photoelectron Counting Statistics of Laser Light Scattered by Very Dilute Solution
- White X-ray Topography of Lattice Undulation in Bonded Silicon-on-Insulator Wafers
- Synchrotron X-Ray Topography of Lattice Undulation of Bonded Silicon-On-Insulator Wafers
- Observation of Lattice Undulation of Commercial Bonded Silicon-On-Insulator Wafers by Synchrotron X-Ray Topography : Structure and Mechanical and Thermal Properties of Condensed Matter
- Large-Area X-Ray Topographs of Lattice Undulation of Bonded Silicon-On-Insulator Wafers
- Effect of Low-Energy Ion Bombardment upon Field-Stimulated Exoelectron Emission from Tungsten Surfaces
- Surface Reaction of a Low-Flux Atomic Oxygen Beam with a Spin-Coated Polymide Film : Synergetic Effect of Atomic Oxygen and Ultraviolet Exposures
- Surface Reaction of a Low Flux Atomic Oxygen Beam with a Spin-Coated Polyimide Film : Translational Energy Dependence on the Reaction Efficiency
- Effects of External Stresses on the Low Temperature Thermal Oxidation of Silicon
- Surface Characterization of Carbon Fibers Exposed to 5 eV Energetic Atomic Oxygen Beam Studied by Wetting Force Measurements
- Large-Scale Atomistic Modeling of Thermally Grown SiO_2 on Si(111) Substrate
- Effects of Thermal History on Residual Order of Thermally Grown Silicon Dioxide
- Strain Measurement by Double Diffraction Method
- Theoretical Interpretation of Moire Pattern for Two Grids of Parallel Lines
- Moire Profile Prediction by Using Fourier Series Formalism
- Response of Ceramic Transducer for Spatially-Bounded Ultrasonic Waves
- Electron Trajectory and Virtual Source of Field Emission Gun of SEM
- Effect of Eccentricity of Anodes in Accelerating Lens for Field Emission Scanning Electron Microscope
- Measurement of Surface Topography as the Intensity Distribution of Light
- Potential and Field Analysis Method Used Electrode Surface Charges
- Increase of Resolution in Acousto-Optic Bragg Imaging System
- Light Source System for Ruby Laser
- Aperture Effect of Electrostatic Lenses
- Determination of the Spot Size by Using the Intensity Distribution in the Accelerating Lens System of Scanning Electron Microscope
- Fracture of GaAs Wafers : Mechanical and Acoustical Properties
- Fabrication of Silicon Utilizing Mechanochemical Local Oxidation by Diamond Tip Sliding : Surfaces, Interfaces, and Films
- The Diffusion Study Titanium-Silver System
- Weibull Distribution of X-Ray Pulse-Height
- A Study on Electron Diffusion in X-ray Microanalyzer Specimen
- Mechanical Properties of Heat-treated CZ-Si Wafers from Brittle to Ductile Temperature Range
- Evaluatlon of Siliclde Morphology by Near-Infrared-Laser Optical-Beam-Induced-Current Technique : Optics and Quantum Electronics
- White X-ray Topography of Lattice Undulation in Bonded Silicon-on-Insulator Wafers
- Synchrotron X-Ray Topography of Lattice Undulation of Bonded Silicon-On-Insulator Wafers
- Large-Scale Atomistic Modeling of Thermally Grown SiO2 on Si(111) Substrate
- Effects of Thermal History on Residual Order of Thermally Grown Silicon Dioxide
- Large-Area X-Ray Topographs of Lattice Undulation of Bonded Silicon-On-Insulator Wafers