Effects of External Stresses on the Low Temperature Thermal Oxidation of Silicon

スポンサーリンク

概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1993-01-15

著者

• TAGAWA Masahito

  Department of Mechanical Engineering, Kobe University

• Ohmae Nobuo

  Department of Mechanical Engineering, Faculty of Engineering, Kobe University

• Umeno M

  Fukui Univ. Technol. Fukui Jpn

• Ohmae Nobuo

  Department Of Mechanical Engineering Faculty Of Engineering Kobe University

• Tamura Takao

  Department Of Civil Engineering Takamatsu National College Of Technology

• Tamura Takao

  Department Of Precision Engineering Faculty Of Engineering Osaka University

• UMENO Masataka

  Department of Precision Engineering, Faculty of Engineering, Osaka University

• Tagawa Masahito

  Department Of Mechanical Engineering Faculty Of Engineering Kobe University

• TANAKA Naoya

  Department of Molecular Science and Technology, Faculty of Engineering, Doshisha University

• Umeno Masataka

  Department Of Applied Physics Faculty Of Engineering Osaka University

• TANAKA Naoki

  New Materials Research Center, SANYO Electric Co., Ltd.

• Tanaka N

  Applied Physics Department Graduate School Of Engineering Nagoya University

• Tanaka Naoya

  Department Of Molecular Science And Technology Faculty Of Engineering Doshisha University

• Tamura Takao

  Department of Applied Chemistry, Faculty of Engineering, Hiroshima University

関連論文

• Structural Comparison between Ge and GaAs Films Grown by Molecular Beam Epitaxy on Si Substrate : Short Note
• Direct Bonding of Epitaxial GaAs Film on Si Substrate With Improved Optical Properties : Structure and Mechanical and Thermal Properties of Condensed Matter
• Effects of Long-Term Irradiation with LEO Environment Effective Factors on Properties of Solid Lubricant
• Bonding of a Carbon Nanotube Film to a Au Film at Low Temperature and Contact Resistance of the Film under Micronewton Loads
• Boron-Incorporated Amorphous Carbon Films Deposited by Pulsed Laser Deposition : Semiconductors
• Effect of Radio Frequency Power on the Properties of Hydrogenated Amorphous Carbon Films Grown by Radio Frequency Plasma-Enhanced Chemical Vapor Deposition
• Theoretical Studies on Hole Transport and the Effective Hall Factor in Cubic Phase of p-Type GaN
• Thermal Stress Relaxation in GaAs Layer on New Thin Si Layer over Porous Si Substrate Grown by Metalorganic Chemical Vapor Deposition
• Emission Properties of Electrodeless Argon Gas Discharge in VUV Region
• Vacuum Ultraviolet Light Source Using Electrodeless Discharge
• Vacuum Ultraviolet Detector
• Measurement of Residual Stress in Bent Silicon Wafers by Means of Photoluminescence
• Oxygen-Related Donors Stable at 700-800℃ in CZ-Si Crystals
• Oxygen-Related Donors Generated at 800℃ in CZ-Si
• Annealing Temperature Effects on Synthesis of n-TiO_2/dye/p-CuI Solid-State Solar Cells
• The Deposition of a-C : H Films by Pulsed Laser Ablation
• Effect of Growth Temperature on InGaAsP/GaAsP Expitaxial Growth
• Crosshatch Pattern on InGaAsP Layers Grown on GaAs_P_ Substrate by LPE
• Meltback of GaAs_P_ Substrate in LPE Growth of InGaAsP
• LPE Growth of In_ Ga_xAs_P_y on GaAs_P_
• Room Temperature Operation of Visible (λ=658.6 nm) InGaAsP DH Laser Diodes on GaAsP
• Visible InGaP / GaAsP Dual Wavelength Light Emitting Diodes
• Formation of Thin Oxide Films on Room-Temperature Silicon (100) by Exposure to a Neutral Beam of Hyperthermal Atomic and Molecular Oxygen
• Oxidation Properties of Hydrogen-Terminated SI (001) Surfaces Following Use of a Hyperthermal Broad Atomic Oxygen Beam at Low Temperatures : Instrumentation, Measurement, and Fabrication Technology
• Synchrotron Radiation Photoelectron Emission Study of SiO_2 Film Formed by Hyperthermal O-Atom Beam at Room Temperature
• The Tribological Characteristics of Ni-Cr Cast Alloy at 1000 Degree C in Air
• White X-ray Topography of Lattice Undulation in Bonded Silicon-on-Insulator Wafers
• Synchrotron X-Ray Topography of Lattice Undulation of Bonded Silicon-On-Insulator Wafers
• Observation of Lattice Undulation of Commercial Bonded Silicon-On-Insulator Wafers by Synchrotron X-Ray Topography : Structure and Mechanical and Thermal Properties of Condensed Matter
• Large-Area X-Ray Topographs of Lattice Undulation of Bonded Silicon-On-Insulator Wafers
• Suppression of GaInN/GaN Multi-Quantum-Well Decomposition during Growth of Light-Emitting-Diode Structure : Structure and Mechanical and Thermal Properties of Condensed Matter
• Effect of Low-Energy Ion Bombardment upon Field-Stimulated Exoelectron Emission from Tungsten Surfaces
• Surface Reaction of a Low-Flux Atomic Oxygen Beam with a Spin-Coated Polymide Film : Synergetic Effect of Atomic Oxygen and Ultraviolet Exposures
• Surface Reaction of a Low Flux Atomic Oxygen Beam with a Spin-Coated Polyimide Film : Translational Energy Dependence on the Reaction Efficiency
• Effects of External Stresses on the Low Temperature Thermal Oxidation of Silicon
• Surface Characterization of Carbon Fibers Exposed to 5 eV Energetic Atomic Oxygen Beam Studied by Wetting Force Measurements
• High growth rate of vertically aligned carbon nanotubes using a plasma shield in microwave plasma-enhanced chemical vapor deposition
• High friction of a vertically aligned carbon-nanotube film in microtribology
• GaAlAs/ GaAs TJS Lasers on Si Substrates Operating at Room Temperature Fabricated by MOCVD
• Plasma Exchange in a Patient with Postpartum HELLP Syndrome
• Selective MOCVD Growth of GaAs on Si Substrate with Superlattice Intermediate Layers
• Band Gap Energy and Stress of GaAs Grown on Si by MOCVD
• Deep Levels in GaAs Grown Using Superlattice Intermediate Layers on Si Substrates by MOCVD
• MOCVD Growth of GaAs_P_x (x=0-1) and Fabrication of GaAs_P_ LED on Si Substrate
• MOCVD Growth of GaAs_P_ on Si Substrate
• AlGaAs/GaAs DH Lasers on Si Substrates Grown Using Super Lattice Buffer Layers by MOCVD
• Mechnism of MOCVD Growth for GaAs and AlAs
• Solid Composition and Growth Rate of Ga_Al_xAs Grown Epitaxially by MOCVD
• Ellipsometric Studies on Sputter-Damaged Layer in n-InP
• A New Homologous Series of Superconducting Cuprates with the 22(n-1)n Structure, (Hg_Tl_x)_2Ba_2Ca_Cu_nO_y (x〜0.4, n=3, 4)
• New Magnetic Phases in the R-Cu-O (R=Tm and Y) Systems
• A Missing Link is Found: a Novel Homologous Series of Superconducting Pb-Based Cuprates
• Dynamic Pressure Measurement Using Two-Frequency Ultrasound : Medical Ultrasonics
• New Approach to Noninvasive Manometry Based on Pressure Dependent Resonant Shift of Elastic Microcapsules in Ultrasonic Frequency Characteristics : Medical Ultrasonics
• Large-Scale Atomistic Modeling of Thermally Grown SiO_2 on Si(111) Substrate
• Effects of Thermal History on Residual Order of Thermally Grown Silicon Dioxide
• Realization of GaAS/AlGaAs Lasers on Si Substrates Using Epitaxial Lateral Overgrowth by Metalorganic Chemical Vapor Deposition : Optics and Quantum Electronics
• First Room-Temperature Continuous-Wave Operation of Self-Formed InGaAs Quantum Dot-Like Laser on Si substrate Grown by Metalorganic Chemical Vapor Deposition
• AlGaAs/GaAs Laser Diodes with GaAs Islands Active Region on a Si Substrate with Higher Characteristic Temperature
• Passivation of Bulk and Surface Defects in GaAs Grown on Si Substrate by Radio Frequency Phosphine/Hydrogen Plasma Exposure : Semiconductors
• Porous β-SiC Fabrication by Electrochemical Anodization
• Blueshifts in the Photoluminescence of Porous Si by Immersion in Deionized Water
• Stress and Strain of GaAs on Si Grown by MOCVD Using Strained Superlattice Intermediate Layers and a Two-Step Growth Method
• Mechanical Property Characterization of Boron-Doped Silicon by Berkovich-Type Indenter : Semiconductors
• Characteristics of GaN MESFET Grown on Sapphire Substrate by MOCVD
• High-Temperature Behaviors of GaN Schottky Barrier Diode
• Effect of Ultrathin Top Silicon Layers on the X-Ray Photoelectron Emission from the Buried Oxide in Silicon-on-Insulator Wafers
• Accurate Thickness Determination of Both Thin SiO_2 on Si and Thin Si on SiO_2 by Angle-Resolved X-Ray Photoelectron Spectroscopy
• Elimination of X-Ray Photoelectron Diffraction Effect of Si(100) for Accurate Determination of SiO_2 Overlayer Thickness
• Kikuchi-Band Analysis of X-Ray Photoelectron Diffraction Fine Structure of Si(100) by Precise Angle-Resolved X-Ray Photoelectron Spectroscopy
• Back-Illuminated GaN Metal-Semiconductor-Metal UV Photodetector With High Internal Gain : Semiconductors
• Recessed Gate AlGaN/GaN HEMT on Sapphire Grown by MOCVD
• Investigations on Strained AlGaN/GaN/Sapphire and GaInN Multi-Quantum-Well Surface LEDs Using AlGaN/GaN Bragg Reflectors(Special Issue on Blue Laser Diodes and Related Devices/Technologies)
• Electrical Characteristics of Schottky Contacts on GaN and Al_Ga_N
• High-Mobility AlGaN/GaN Heterostructures Grown on Sapphire by Metal-Organic Chemical Vapor Deposition
• Optical Absorption and Photoluminescence Studies of n-type GaN
• Photoluminescence Studies of Hydrogen-Passivated Al_Ga_As Grown on Si Substrate by Metalorganic Chemical Vapor Deposition
• GaN on Si Substrate with AlGaN/AlN Intermediate Layer
• Effects of H Plasma Passivation on the Optical and Electrical Properties of GaAs-on-Si
• High-Quality InGaN Light Emitting Diode Grown on GaN/AlGaN Distributed Bragg Reflector
• Characteristics of a GaN Metal Semiconductor Field-Effect Transistor Grown on a Sapphire Substrate by Metalorganic Chemical Vapor Deposition
• Light Source System for Ruby Laser
• Fracture of GaAs Wafers : Mechanical and Acoustical Properties
• Study on Near Dry Machining of Aluminum Alloys(Advanced Manufacturing Technology [I])
• Investigation of Electrical and Optical Properties of Phosphine/Hydrogen-Plasma-Exposed In_Ga_P Grown on Si SubStrate : Semiconductors
• Electrical Characteristics of GaAs Bonded to Si Using SeS_2 Technique
• Low Temperature Growth of GaAs on Si Substrate by Chemical Beam Epitaxy
• Synthesis and mechanical properties of carbon nanotube/diamond-like carbon composite films
• Hydrogen Plasma Passivation and Improvement of the Photovoltaic Properties of a GaAs Solar Cell Grown on Si Substrate
• Mechanical Properties of Heat-treated CZ-Si Wafers from Brittle to Ductile Temperature Range
• Low-Threshold AlGaAs/GaAs MQW Laser Diode Fabricated on Si Substrates by MOCVD
• AlGaAs/GaAs MQW Laser Diode Fabricated on Si Substrates by MOCVD
• Surface and Bulk Passivation effect of GaAs grown on Si Substrates by SeS_2Treatment
• MATHEMATICAL MODELING OF SOLUTE RUNOFF FROM FORESTED BASIN
• FORMATION PROCESS OF STREAMWATER CHEMISTRY IN SMALL FORESTED MOUNTAIN BASIN
• MOCVD Growth of InP Using Red-Phosphorus and Hydrogen Plasma
• Optical Absorption and Electrical Conductivity of Amorphous Carbon Thin Films from Camphor : A Natural Source
• Effect of the Soft X-rays on Highly Hydrogenated Diamond-Like Carbon Films
• Frictional Properties of Carbon Nanotube Films with a Load Range from Micronewton to Millinewton Using mm Size Balls
• A positive halogen mediated ring-opening reaction of 2-(.ALPHA.-phenylthiobenzyl)cycloalkanol derivatives.

もっと見る 閉じる

スポンサーリンク