MOCVD Growth of InP Using Red-Phosphorus and Hydrogen Plasma
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概要
- 論文の詳細を見る
InP epitaxial layers have been grown by metalorganic chemical vapor deposition using red-phosphorus and hydrogen plasma alternative to PH_3 gas cylinder. The carrier concentration was 3.9×10^<16> cm^<-3> and the Hall mobility was 3650cm^2/V s at 300 K. Quadrupole mass spectrometer showed that the group V sources in this method were PH_3 and phosphorus vapor.
- 社団法人応用物理学会の論文
- 1987-09-20
著者
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Umeno Masayoshi
Department Of Electric And Computer Engineering Nagoya Institute Of Technology
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Umeno M
Fukui Univ. Technol. Fukui Jpn
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NAITOH Masami
Department of Electrical and Computer Engineering, Nagoya Institute of Technology
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