La Induced Passivation of High-k Bulk and Interface Defects in Polycrystalline Silicon/TiN/HfLaSiO/SiO2 Stacks
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概要
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La incorporation into Hf-based gate dielectrics is a promising methodology for achieving low threshold voltage (V_{\text{th}}) metal/high-k n-channel metal--oxide--semiconductor field-effect transistors (nMOSFETs) with the gate-first process. To clarify the impact of the Hf/La ratio in high-k dielectrics on device performance, we investigated high-k bulk and interface traps of polycrystalline silicon (poly-Si)/TiN/HfLaSiO/SiO2 stacks with various Hf/La ratios. We found that La incorporation is effective for improving electron mobility; however, in a pure LaSiO device, the mobility is degraded. Our charge-pumping (CP) measurements revealed that both high-k bulk traps and near-interface traps (N_{\text{it}}) near the conduction band, which cause mobility degradation, can be effectively passivated by La incorporation. These results imply that an optimized La ratio will lead to superior nMOSFET performance, while an appropriate V_{\text{th}} can be tuned.
- 2011-10-25
著者
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Hosoi Takuji
Department Of Electronics And Information Systems Osaka University
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Watanabe Heiji
Department Of Material And Life Science Graduate School Of Engineering Osaka University
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Saeki Masayuki
Department Of Civil Engineering Faculty Of Science And Technology Tokyo University Of Science
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Shimura Takayoshi
Department Of Material And Life Science Graduate School Of Engineering Osaka University
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Kitano Naomu
Department of Material and Life Science, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Kitano Naomu
Department of Material and Life Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Arimura Hiroaki
Department of Material and Life Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Arimura Hiroaki
Department of Material and Life Science, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Saeki Masayuki
Department of Material and Life Science, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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