Characteristics of Pure Ge3N4 Dielectric Layers Formed by High-Density Plasma Nitridation
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概要
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We have demonstrated the direct nitridation of Ge substrates to obtain pure germanium nitrides (Ge3N4). Physical characterization revealed that 3.5-nm-thick amorphous Ge3N4 layers with smooth surfaces and abrupt nitride/Ge interfaces were formed by the high-density plasma nitridation of Ge(100) substrates. We have investigated the thermal stability of the Ge3N4 layers, and found that the nitride was stable up to 550 °C and started to decompose around 580 °C under an N2 ambient, while maintaining smooth nitride surfaces during thermal decomposition. We also found that vacuum annealing did not affect the decomposition temperature and that nitrogen was the only desorption species during Ge3N4 decomposition, which led to the regrowth of smooth and crystalline Ge surfaces after the nitrides had been completely removed at 700 °C. These results demonstrate both the superior thermal stability of pure Ge3N4 as a gate insulator and feasibility of using nitride as a surface passivation layer in the fabrication of Ge-based devices.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2008-04-25
著者
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Hosoi Takuji
Department Of Electronics And Information Systems Osaka University
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Watanabe Heiji
Department Of Material And Life Science Graduate School Of Engineering Osaka University
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Shimura Takayoshi
Department Of Material And Life Science Graduate School Of Engineering Osaka University
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Kutsuki Katsuhiro
Department of Material and Life Science, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Okamoto Gaku
Department of Material and Life Science, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Kutsuki Katsuhiro
Department of Material and Life Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Okamoto Gaku
Department of Material and Life Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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