Optical Beam Induced Current Techniques for Failure Analysis of Very Large Scale Integrated Circuits Devices

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概要

• 論文の詳細を見る

• In failure analysis of complementary metal oxide semiconductor (CMOS) very large scale integrated (VLSI) circuits using optical beam induced current (OBIC) techniques, circuit analysis was carried out by studying the flow path of detected photocurrents for the first time. This circuit analysis revealed that the OBIC current can be detected even on a good unit. Furthermore, this gave a clear explanation as to the reason why the suspected failure site detected by OBIC and emission microscopy analyses did not always occur at the same site as the defect. This study showed that there is a high possibility of detecting a failure due to metal-metal short by OBIC analysis.

• 社団法人応用物理学会の論文
• 1994-06-15

著者

• Komoda H

  Ricoh Co. Ltd. Osaka Jpn

• Komoda Hirotaka

  Electronic Devices Company Ricoh Co. Ltd.

• Shimizu Katsusuke

  Electronic Devices Division Ricoh Company Ltd.

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