Atmospheric In-situ Arsenic-Doped SiGe Selective Epitaxial Growth for Raised Extension NMOSFET
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概要
- 論文の詳細を見る
- 2006-09-13
著者
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IWAMOTO Hayato
Semiconductor Technology Development Division, Semiconductor Business Group, Sony Corporation
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KADOMURA Shingo
Semiconductor Technology Development Division, Semiconductor Business Group, Sony Corporation
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Kadomura Shingo
Semiconductor Technology Development Division Semiconductor Business Group Sony Corporation
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Iwamoto Hayato
Semiconductor Technology Development Division Semiconductor Business Group Sony Corporation
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IKUTA Tetsuya
Semiconductor Technology Development Division, Semiconductor Business Group, Sony Corporation
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MIYANAMI Yuki
Semiconductor Technology Development Division, Semiconductor Business Group, Sony Corporation
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FUJITA Shigeru
Semiconductor Technology Development Division, Semiconductor Business Group, Sony Corporation
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Miyanami Yuki
Semiconductor Technology Development Division Semiconductor Business Group Sony Corporation
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Ikuta Tetsuya
Semiconductor Technology Development Division Semiconductor Business Group Sony Corporation
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Fujita Shigeru
Semiconductor Technology Development Division Semiconductor Business Group Sony Corporation
関連論文
- Mechanism of Carrier Mobility Degradation Induced by Crystallization of HfO_2 Gate Dielectrics
- In-situ Doped Si Selective Epitaxial Growth for Raised Source/Drain Extension CMOSFET
- Atmospheric In-situ Arsenic-Doped SiGe Selective Epitaxial Growth for Raised Extension NMOSFET
- Low Threshold Voltage and High Mobility N-Channel Metal–Oxide–Semiconductor Field-Effect Transistor Using Hf–Si/HfO2 Gate Stack Fabricated by Gate-Last Process
- Threshold Voltage Modulation Technique using Fluorine Treatment through Atomic Layer Deposition TiN Suitable for Complementary Metal–Oxide–Semiconductor Devices
- Application of HfSiON to Deep-Trench Capacitors of Sub-45-nm-Node Embedded Dynamic Random-Access Memory
- Tinv Scaling and Gate Leakage Reduction for n-Type Metal Oxide Semiconductor Field Effect Transistor with HfSix/HfO2 Gate Stack by Interfacial Layer Formation Using Ozone–Water-Last Treatment
- Atmospheric In situ Arsenic-Doped SiGe Selective Epitaxial Growth for Raised-Extension N-type Metal–Oxide–Semiconductor Field-Effect Transistor
- Investigation of In-situ Boron-Doped Si Selective Epitaxial Growth by Comparison with Arsenic Doping