Characterization of SiGe Layer during Ge Condensation Process by X-ray Diffraction Methods
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概要
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We fabricated a Ge-on-insulator (GOI) structure by the Ge condensation method and characterized the SiGe layer during the condensation process by X-ray reciprocal space mapping and synchrotron microbeam X-ray diffraction. The crystalline quality of the SiGe layer degraded during the initial 1 h of oxidation at 1050 °C and it also rapidly degraded during 1 h of oxidation at 900 °C immediately before the formation of GOI structures. The slight degradation was caused by annealing in Ar, indicating that the degradation during the initial 1-h condensation is accelerated by Ge atoms being ejected from the oxidized interface.
- 2011-01-25
著者
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Sakata Osami
Research Laboratory Of Engineering Materials Tokyo Institute Of Technology
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Inoue Tomoyuki
Graduate School Of Engineering Yokohama National University
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Watanabe Heiji
Graduate School Of Engineering Osaka University
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HOSOI Takuji
Graduate School of Engineering, Osaka University
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Imai Yasuhiko
Research And Development Division Kikkoman Corporation
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Shimura Takayoshi
Graduate School Of Engineering Osaka University
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Kimura Shigeru
Research and Utilization Division, Japan Synchrotron Radiation Research Institute (JASRI)/SPring-8, Sayo, Hyogo 679-5198, Japan
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Shimura Takayoshi
Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Shimokawa Daisuke
Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Sakata Osami
Research and Utilization Division, Japan Synchrotron Radiation Research Institute (JASRI)/SPring-8, Sayo, Hyogo 679-5198, Japan
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Hosoi Takuji
Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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