V_<ox>/E_<ox>-Driven Breakdown of Ultrathin SiON Gate Dielectrics in p-Type Metal Oxide Semiconductor Field Effect Transistors under Low-Voltage Inversion Stress

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2007-01-15

著者

• Umeda Hiroshi

  Renesas Technology Corp.

• Yugami Jiro

  Renesas Technology Corp.

• TSUJIKAWA Shimpei

  Renesas Technology Corp.

• SHIGA Katsuya

  Renesas Technology Corp.

関連論文

• V_/E_-Driven Breakdown of Ultrathin SiON Gate Dielectrics in p-Type Metal Oxide Semiconductor Field Effect Transistors under Low-Voltage Inversion Stress
• Suppression of Boron Penetration from Source/Drain-Extension to Improve Gate Leakage Characteristics and Gate-Oxide Reliability for 65-nm Node CMOS and Beyond
• $V_{\text{ox}}/E_{\text{ox}}$-Driven Breakdown of Ultrathin SiON Gate Dielectrics in p-Type Metal Oxide Semiconductor Field Effect Transistors under Low-Voltage Inversion Stress
• Enhanced Performance of Gate-First p-Channel Metal–Insulator–Semiconductor Field-Effect Transistors with Polycrystalline Silicon/TiN/HfSiON Stacks Fabricated by Physical Vapor Deposition Based In situ Method
• Phase and Composition Control of Ni Fully Silicided Gates by Nitrogen Ion Implantation and Double Ni Silicidation

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