Effect of Hydrogenation on the Dangling-Bond Free 4H-SiC(1120)/SiO_2 Interface Studied by Ab Initio Calculations

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概要

• 論文の詳細を見る
• 2009-08-25

著者

• OKUNO Eiichi

  Research Laboratory, DENSO CORPORATION

• SAKAKIBARA Toshio

  Research Laboratory, DENSO CORPORATION

• ONDA Shoichi

  Research Laboratory, DENSO CORPORATION

• ITOH Makoto

  AdvanceSoft Corporation

• UDA Tsuyoshi

  AdvanceSoft Corporation

• Okuno Eiichi

  Research Laboratory Denso Corporation

• Onda Shoichi

  Research Laboratory Denso Corporation

• Sakakibara Toshio

  Research Laboratory Denso Corporation

• Uda Tsuyoshi

  Advanced Research Laboratory Hitachi Ltd.

関連論文

• Effect of Hydrogenation on the Dangling-Bond Free 4H-SiC(1120)/SiO_2 Interface Studied by Ab Initio Calculations
• First Principles Theoretical Study of 4H-SiC/SiO_2 Interfacial Electronic States on (0001), (0001), and (1120)
• Microscopic Effect of Nitrogen Doping on Dielectric Constant of Hf-silicate
• First-Principles Calculation Software for Dielectric Response Study of High-k Materials
• Calculated Threshold Current Densityof Multi-Quantum-Well Wire Lasers
• Comprehensive Study of the X-Ray Photoelectron Spectroscopy Peak Shift of La-Incorporated Hf Oxide for Gate Dielectrics

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