UDA Tsuyoshi | AdvanceSoft Corporation
スポンサーリンク
概要
関連著者
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UDA Tsuyoshi
AdvanceSoft Corporation
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Uda Tsuyoshi
Advanced Research Laboratory Hitachi Ltd.
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OKUNO Eiichi
Research Laboratory, DENSO CORPORATION
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SAKAKIBARA Toshio
Research Laboratory, DENSO CORPORATION
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ONDA Shoichi
Research Laboratory, DENSO CORPORATION
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ITOH Makoto
AdvanceSoft Corporation
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Okuno Eiichi
Research Laboratory Denso Corporation
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Onda Shoichi
Research Laboratory Denso Corporation
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Yamamoto Takenori
Advancesoft Corporation
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Sakakibara Toshio
Research Laboratory Denso Corporation
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Ohno T
National Research Institute For Metals
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Ohno Takahisa
National Institute For Materials Science
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Ohno Takahisa
Computational Materials Science Center National Institute For Materials Science
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Ohno Takahisa
National Research Institute For Metals
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MOMIDA Hiroyoshi
Institute of Industrial Science, University of Tokyo
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HAMADA Tomoyuki
Institute of Industrial Science, University of Tokyo
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Ohno Takahisa
First Principles Simulation Group Computational Materials Science Center National Institute For Mate
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Hamada Tomoyuki
Institute Of Industrial Science University Of Tokyo
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Momida Hiroyoshi
Institute Of Industrial Science University Of Tokyo
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Ohno Takahisa
Science University Of Tokyo
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CHIKYOW Toyohiro
National Institute for Mateirals Science
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Umezawa Naoto
National Inst. For Materials Sci. Ibaraki Jpn
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Yamamoto Takenori
Institute for Genome Research
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SHIRAISHI Kenji
Institute of Physics, University of Tsukuba
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OHNO Takahisa
National Institute for Materials Science (NIMS)
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Chikyow Toyohiro
National Institute For Materials Science
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Ohtoshi Tsukuru
Central Research Laboratory Hitachi Ltd.
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Chinone Naoki
Central Research Laboratory Hitachi Ltd.
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Umezawa Naoto
National Institute For Materials Science
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UDA Tsuyoshi
Institute of Industrial Science, University of Tokyo
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OHNO Takahisa
Institute of Industrial Science, University of Tokyo
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Chikyow Toyohiro
National Inst. Materials Sci. Ibaraki Jpn
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Shiraishi Kenji
Institute Of Physics University Of Tsukuba
著作論文
- Effect of Hydrogenation on the Dangling-Bond Free 4H-SiC(1120)/SiO_2 Interface Studied by Ab Initio Calculations
- First Principles Theoretical Study of 4H-SiC/SiO_2 Interfacial Electronic States on (0001), (0001), and (1120)
- Microscopic Effect of Nitrogen Doping on Dielectric Constant of Hf-silicate
- First-Principles Calculation Software for Dielectric Response Study of High-k Materials
- Calculated Threshold Current Densityof Multi-Quantum-Well Wire Lasers