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Ohba Ryuji | 論文著者
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Ohba Ryuji
Advanced LSI laboratory, Corporate R&D Center, Toshiba Corporation
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Ohba Ryuji
Advanced LSI laboratory, Corporate R&D Center, Toshiba Corporation, 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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OHBA Ryuji
Advanced LSI Technology Laboratory, Research and Development Center, Toshiba Corporation
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Ohba Ryuji
Advanced LSI Technology Laboratory, Research and Development Center, Toshiba Corporation, <BR> 8, Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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OHBA Ryuji
Advanced LSI Technology Laboratory, Toshiba Corporation
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Ohba Ryuji
Advanced LSI Technology Laboratory, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Ohba Ryuji
Advanced LSI Technology Laboratory, Toshiba Corporation, Saiwai-ku, Kawasaki 212-8582, Japan
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Ohba Ryuji
Flash Memory Device Technology Department, Center for Semiconductor Research and Development, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Ohba Ryuji
Research And Development Center Toshiba Corporation
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Ohba Ryuji
Research and Development Center, Toshiba Corporation
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Ohba Ryuji
Research and Development Center, Toshiba Corporation, 1 Komukai Toshiba–cho, Saiwai–ku, Kawasaki 210, Japan
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OHBA Ryuji
The authors are with Advanced LSI Technology Laboratory, Toshiba Corporation
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Ohba Ryuji
Ulsi Research Laboratories Toshiba Corporation
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OHBA Ryuji
ULSI Research Laboratories, Toshiba Corporation
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Ohba Ryuji
ULSI Research Laboratories, Toshiba Corporation, 1, Komukai Toshiba–cho, Saiwai–ku, Kawasaki 210, Japan