Detection of a Charged Two-Level System by Using the Kondo and the Fano--Kondo Effects in Quantum Dots

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概要

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• The Kondo effect and the Fano--Kondo effect are important phenomena that have been observed in quantum dots (QDs). We theoretically investigate the transport properties of a coupled QD system in order to study the possibility of detecting a qubit state from the modulation of the conductance peak in the Kondo effect and the dip in the Fano--Kondo effect. We show that the peak and dip of the conductance are both shifted depending on the qubit state. In particular, we find that we can estimate the optimal point and tunneling coupling between the |0\rangle and |1\rangle states of the qubit by measuring the shift of the positions of the conductance peak and dip, as functions of the applied gate voltage on the qubit and the distance between the qubit and the detector.

• 2013-04-25

著者

• Tanamoto Tetsufumi

  Corporate R&d Center Toshiba Corporation

• Hu Xuedong

  Department Of Physics University At Buffalo Suny

• Nori Franco

  Advanced Science Institute, RIKEN, Wako, Saitama 351-0198, Japan

• Liu Yu-xi

  Institute of Microelectronics, Tsinghua University, Beijing 100084, China

関連論文

• The effect of side-traps on ballistic transistor in Kondo regime
• Fano-Kondo effect in three quantum dots aiming at charge qubit measurement
• Measurement of Two-Qubit States using a Two-Island Single Electron Transistor
• High-Speed Magnetoresistive Random-Access Memory Random Number Generator Using Error-Correcting Code
• Robustness of Charge-Qubit Cluster States to Double Quantum Point Contact Measurement
• Steady-State Solution for Dark States Using a Three-Level System in Coupled Quantum Dots
• Detection of a Charged Two-Level System by Using the Kondo and the Fano--Kondo Effects in Quantum Dots
• Detection of a Charged Two-Level System by Using the Kondo and the Fano-Kondo Effects in Quantum Dots (Special Issue : Solid State Devices and Materials)

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