Detection of a Charged Two-Level System by Using the Kondo and the Fano-Kondo Effects in Quantum Dots (Special Issue : Solid State Devices and Materials)

スポンサーリンク

概要

• 論文の詳細を見る

著者

• Tanamoto Tetsufumi

  Corporate R&d Center Toshiba Corporation

• Hu Xuedong

  Department Of Physics University At Buffalo Suny

• Nori Franco

  Advanced Science Institute, RIKEN, Wako, Saitama 351-0198, Japan

• Liu Yu-xi

  Institute of Microelectronics, Tsinghua University, Beijing 100084, China

関連論文

• The effect of side-traps on ballistic transistor in Kondo regime
• Fano-Kondo effect in three quantum dots aiming at charge qubit measurement
• Measurement of Two-Qubit States using a Two-Island Single Electron Transistor
• High-Speed Magnetoresistive Random-Access Memory Random Number Generator Using Error-Correcting Code
• Robustness of Charge-Qubit Cluster States to Double Quantum Point Contact Measurement
• Steady-State Solution for Dark States Using a Three-Level System in Coupled Quantum Dots
• Detection of a Charged Two-Level System by Using the Kondo and the Fano--Kondo Effects in Quantum Dots
• Detection of a Charged Two-Level System by Using the Kondo and the Fano-Kondo Effects in Quantum Dots (Special Issue : Solid State Devices and Materials)

スポンサーリンク