Kinoshita Atsuhiro | Advanced Lsi Technology Laboratory Corporate R & D Center Toshiba Corporation
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関連著者
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Kinoshita Atsuhiro
Advanced Lsi Technology Laboratory Corporate R & D Center Toshiba Corporation
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Kinoshita Atsuhiro
Advanced LSI Technology Laboratory, Corporate R & D Center, Toshiba Corporation
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Koga Junji
Advanced Lsi Technology Laboratory Corporate R & D Center Toshiba Corporation
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Tsunashima Yoshitaka
Advanced Lsi Technology Laboratory Corporate R & D Center Toshiba Corporation
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KOGA Junji
Advanced LSI Technology Laboratory, Research and Development Center, Toshiba Corporation
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Tsuchiya Yoshinori
Advanced LSI Technology Laboratory, Corporate R & D Center, Toshiba Corporation
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Tsuchiya Yoshinori
Advanced Lsi Technology Laboratory Corporate R & D Center Toshiba Corporation
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Nishiyama Akira
Advanced LSI Technology Laboratory, Corporate R & D Center, Toshiba Corporation
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Yoshiki Masahiko
Advanced LSI Technology Laboratory, Corporate R & D Center, Toshiba Corporation
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Koyama Masato
Advanced LSI Technology Laboratory, Corporate R & D Center, Toshiba Corporation
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Yoshiki Masahiko
Advanced Lsi Technology Laboratory Corporate R & D Center Toshiba Corporation
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Nishiyama Akira
Advanced Lsi Technology Laboratory Corporate R & D Center Toshiba Corporation
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Nishiyama Akira
Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation
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Koyama Masato
Advanced Lsi Technology Laboratory Corporate R & D Center Toshiba Corporation
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Nishi Yoshifumi
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
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Ohuchi Kazuya
Soc Research & Development Center Semiconductor Company Toshiba Corporation
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Goto Masakazu
Center For Semiconductor Research & Development Semiconductor Company Toshiba Corporation
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YAMAUCHI Takashi
Advanced LSI Technology Laboratory, Corporate Research & Development Center, Toshiba Corporation
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KATO Koichi
Advanced LSI Technology Laboratory, Corporate Research & Development Center, Toshiba Corporation
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Tatsumua Ksuke
Advanced LSI Technology Laboratory, Corporate Research and Development Center, Toshiba Corporation
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Kawanaka Shigeru
Center For Semiconductor Research & Development, Semiconductor Company, Toshiba Corporation
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Kawanaka Shigeru
Center For Semiconductor Research & Development Semiconductor Company Toshiba Corporation
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Tatsumua Ksuke
Advanced Lsi Technology Laboratory Corporate Research And Development Center Toshiba Corporation
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Kinoshita Atsuhiro
Toshiba Corp. Kawasaki Jpn
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Kinoshita Atsuhiro
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
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Kinoshita Atsuhiro
Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation
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Kato Koichi
Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation
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Yamauchi Takashi
Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation
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KOGA Junji
Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation
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Tatsumura Kosuke
Advanced LSI Technology Laboratory, Corporate Research and Development Center, Toshiba Corporation
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Kinoshita Atsuhiro
Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Nishi Yoshifumi
Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Hagishima Daisuke
Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Hagishima Daisuke
Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
著作論文
- Guidelines for the threshold voltage control of metal/HfSiON system(Session2: Silicon Devices I)
- Guidelines for the threshold voltage control of metal/HfSiON system(Session2: Silicon Devices I)
- Germanium-induced Modulation of Work Function and Impurity Segregation Effect in Fully-Ni-germanosilicide (Ni(Si_Ge_x)) Gate
- Dopant Redistribution at Nickel Silicide/Silicon Interface
- Correlation between low-field mobility and high-field carrier velocity in quasi-ballistic-transport MISFETs scaled down to Lg=30nm (シリコン材料・デバイス・IEDM特集(先端CMOSデバイス・プロセス技術))
- Examination of Performance Improvement in Dopant Segregated Schottky MOSFETs ; Short Channel Effects, Carrier Velocity and Parasitic Resistance
- Experimental Study on Performance Improvement in Dopant-Segregated Schottky Metal–Oxide–Semiconductor Field-Effect Transistors