Tsunashima Yoshitaka | Advanced Lsi Technology Laboratory Corporate R & D Center Toshiba Corporation
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概要
- TSUCHIYA Yoshinoriの詳細を見る
- 同名の論文著者
- Advanced Lsi Technology Laboratory Corporate R & D Center Toshiba Corporationの論文著者
関連著者
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Tsunashima Yoshitaka
Advanced Lsi Technology Laboratory Corporate R & D Center Toshiba Corporation
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Tsuchiya Yoshinori
Advanced LSI Technology Laboratory, Corporate R & D Center, Toshiba Corporation
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Tsuchiya Yoshinori
Advanced Lsi Technology Laboratory Corporate R & D Center Toshiba Corporation
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KOGA Junji
Advanced LSI Technology Laboratory, Research and Development Center, Toshiba Corporation
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Nishiyama Akira
Advanced LSI Technology Laboratory, Corporate R & D Center, Toshiba Corporation
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Koyama Masato
Advanced LSI Technology Laboratory, Corporate R & D Center, Toshiba Corporation
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Nishiyama Akira
Advanced Lsi Technology Laboratory Corporate R & D Center Toshiba Corporation
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Nishiyama Akira
Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation
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Koga Junji
Advanced Lsi Technology Laboratory Corporate R & D Center Toshiba Corporation
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Koyama Masato
Advanced Lsi Technology Laboratory Corporate R & D Center Toshiba Corporation
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Kinoshita Atsuhiro
Advanced LSI Technology Laboratory, Corporate R & D Center, Toshiba Corporation
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Kinoshita Atsuhiro
Advanced Lsi Technology Laboratory Corporate R & D Center Toshiba Corporation
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Yoshiki Masahiko
Advanced LSI Technology Laboratory, Corporate R & D Center, Toshiba Corporation
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Yoshiki Masahiko
Advanced Lsi Technology Laboratory Corporate R & D Center Toshiba Corporation
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ICHIHARA Reika
Advanced LSI Technology Laboratory, Toshiba Corp.
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KAMIMUTA Yuuichi
Advanced LSI Technology Laboratory, Toshiba Corp.
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Ichihara Reika
Advanced Lsi Technology Laboratory Toshiba Corp.
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Kamimuta Yuuichi
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
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Kamimuta Yuuichi
Advanced Lsi Technology Laboratory Corporate Research And Development Center Toshiba Corporation
著作論文
- Guidelines for the threshold voltage control of metal/HfSiON system(Session2: Silicon Devices I)
- Guidelines for the threshold voltage control of metal/HfSiON system(Session2: Silicon Devices I)
- Dependence of effective work function modulation with phosphorous segregation on Ni to Si ratio in Ni silicide/SiO2 systems
- Material Characterization of Metal Germanide Gate Electrodes Formed by Fully Germanided Gate Process (Special Issue: Solid State Devices & Materials)
- Ta-based metal gates (Ta, TaB_x, TaN_x and TaC_x) : Modulated Work Function and Improved Thermal Stability
- Material Characterization of Metal-germanide Gate Electrodes Formed by FUGE (Fully Germanided) Process
- Germanium-induced Modulation of Work Function and Impurity Segregation Effect in Fully-Ni-germanosilicide (Ni(Si_Ge_x)) Gate