Material Characterization of Metal Germanide Gate Electrodes Formed by Fully Germanided Gate Process (Special Issue: Solid State Devices & Materials)

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文

著者

• Tsunashima Yoshitaka

  Advanced Lsi Technology Laboratory Corporate R & D Center Toshiba Corporation

関連論文

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• Material Characterization of Metal Germanide Gate Electrodes Formed by Fully Germanided Gate Process (Special Issue: Solid State Devices & Materials)
• Ta-based metal gates (Ta, TaB_x, TaN_x and TaC_x) : Modulated Work Function and Improved Thermal Stability
• Material Characterization of Metal-germanide Gate Electrodes Formed by FUGE (Fully Germanided) Process
• Germanium-induced Modulation of Work Function and Impurity Segregation Effect in Fully-Ni-germanosilicide (Ni(Si_Ge_x)) Gate

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