Ishikawa Takayuki | Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation, Yokohama 235-8522, Japan

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概要

関連著者

Numata Toshinori
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
Saitoh Masumi
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
Tanaka Chika
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
Ota Kensuke
Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation, Yokohama 235-8522, Japan
Ishikawa Takayuki
Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation, Yokohama 235-8522, Japan

著作論文

Nanowire-Width and Dopant-Species Dependences of Carrier Transport Characteristics of Schottky Barrier Source/Drain Nanowire Field-Effect Transistors (Special Issue : Solid State Devices and Materials (2))

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