New Linewidth Measurement System Using Environmental Scanning Electron Microscope Technology
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1993-12-30
著者
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Suzuki S
System Designing Section 2nd Designing Department Industrial Supplies & Equipment Division Nikon
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YAMAGUCHI Takeshi
Advanced LSI Technology Laboratory, Toshiba Corporation
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Suzuki Shohei
System Designing Section 2nd Designing Department Industrial Supplies & Equipment Division Nikon
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Yamaguchi T
Nikon Corp. Tokyo Jpn
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Kawata Shintaro
System Designing Section 2nd Designing Department Industrial Supplies & Equipment Division Nikon
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YAMAGUCHI Takeshi
System Designing Section, 2nd Designing Department, Industrial Supplies & Equipment Division, Nikon
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SATO Tatsuo
System Designing Section, 2nd Designing Department, Industrial Supplies & Equipment Division, Nikon
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SATO Yu
System Designing Section, 2nd Designing Department, Industrial Supplies & Equipment Division, Nikon
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Sato Yu
System Designing Section 2nd Designing Department Industrial Supplies & Equipment Division Nikon
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Sato Tatsuo
System Designing Section 2nd Designing Department Industrial Supplies & Equipment Division Nikon
関連論文
- Structure of Ultrathin Epitaxial CeO_2 Films Grown on Si(111)
- Improvement of Memory Characteristics of Metal-Ferroelectrics/Insulating Buffer Layer/Semiconductor Structures by Combination of Pulsed Laser Deposited SrBi_2Ta_2O_9 Films and Ultra-Thin SiN Buffer Layers
- Improvement of Memory Characteristics of MFIS Structures by Combination of Pulsed Laser Deposited SrBi_2Ta_2O_9 Films and Ultra-Thin SiN Buffer Layers
- Impact of Captured-Carrier Distribution on Recovery Characteristics of Positive- and Negative-Bias Temperature Instability in HfSiON/SiO_2 Gate Stack
- Influences of initial bulk traps on Negative Bias Temperature Instability of HfSiON
- Universal thermal activation process and current induced degradation on dielectric breakdown in HfSiO(N)
- High quality La aluminates/Si (100) interface realized by passivation of Si dangling bonds with one monolayer epitaxial SrSi_2
- Influence of pre-existing electron traps on drive current in MISFETs with HfSiON gate dielectrics
- New Linewidth Measurement System Using Environmental Scanning Electron Microscope Technology
- Ergatoid Queens of Slave-making Ant Polyergus samurai YANO (Hymenoptera, Formicidae)
- Enhancement of Dielectric Constant due to Expansion of Lattice Spacing in CeO_2 Directly Grown on Si(111)