Effect of Fe Doping of Thin (Ba,Sr)TiO_3 Films on Increase in Dielectric Constant

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概要

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• Barium strontium titanate [(Ba,Sr)TiO_3, BST] is an attractive material with a very high dielectric constant. However, the dielectric constant of BST films decreases with film thickness, which has become a serious problem for dynamic random access memory (DRAM) application. We found Fe doping of BST films to be remarkably effective for suppressing the decrease in dielectric constant down to the very thin film regime. As a result, a marked increase in the dielectric constant for thin BST films is achieved. Furthermore, we identify the site where the doped Fe ions are substituted in the crystal by means of electron standing wave method using SrTiO_3 single crystal. The result shows that most of the Fe ions are substituted at B sites (Ti sites), which suggests that Fe ions as acceptors compensate donor electrons and reduce band bending. This is thought to be the most likely mechanism of the increase in dielectric constant caused by Fe doping.

• 社団法人応用物理学会の論文
• 2002-10-15

著者

• Takeno Shiro

  Environmental Engineering And Analysis Center R & D Center

• Nakamura Kenro

  Process And Manufacturing Engineering Center Toshiba Corporation

• IMAI Ketaro

  Process and Manufacturing Engineering Center, Toshiba Corporation

• Imai Ketaro

  Process And Manufacturing Engineering Center Toshiba Corporation

関連論文

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• Effect of Fe Doping of Thin (Ba,Sr)TiO_3 Films on Increase in Dielectric Constant

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