Re-Oxidation of Thermally Nitrided Silicon Dioxide Thin Films
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概要
- 論文の詳細を見る
Re-oxidation of thermally nitrided SiO_2 thin films was studied. The SiO_2 growth rate at re-oxidation is reduced until a certain time (the "oxidation delay time" or "ODT") has passed. During the ODT, thermally nitrided SiO_2 at the Si-SiO_2 interface is re-oxidized. the ODT is the time required for complete oxidation of nitrided SiO_2. Re-oxidation of thermally nitrided SiO_2 thin films is limited not by diffusion of oxidizing species, but by oxidation of nitrided SiO_2. The ODT is proportional to the nitrided SiO_3 thickness. Nitrided SiO_3 formation at the Si-SiO_2 interface is mass-transfer controlled by nitriding species through nitrided SiO_3 to Si substrate. As an application of thermal nitridation of SiO_2, thermal nitridation of the local oxidation of silicon (LOCOS) pad oxide can shorten the bird's beak of LOCOS.
- 社団法人応用物理学会の論文
- 1995-06-15
著者
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KIYOTOSHI Masahiro
Microelectronics Engineering Laboratory, Semiconductor Company, Toshiba Corporation
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Yamabe K
Institute Of Applied Physics University Of Tsukuba
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Yamabe Kikuo
Ulsi Research Center Toshiba Corporation
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KIYOTOSHI Masahiro
ULSI Process Engineering Laboratory, Microelectronics Engineering Laboratory, Toshiba Corporation
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Kiyotoshi Masahiro
Microelectronics Engineering Laboratory Semiconductor Company Toshiba Corporation
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TSUNASIMA Yoshitaka
ULSI Research Laboratories, Research and Development Center, Toshiba Corporation
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Tsunasima Yoshitaka
Ulsi Research Laboratories Research And Development Center Toshiba Corporation
関連論文
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- Re-Oxidation of Thermally Nitrided Silicon Dioxide Thin Films