Inlaid Cu Interconnects Employing Ti-Si-N Barrier Metal for ULSI Applications
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概要
- 論文の詳細を見る
We have developed inlaid copper interconnects employing amorphous Ti-Si-N barrier metal. The interconnect resistivity is 1.9±0.1 μΩcm. Ti-Si-N films were shown to be amorphous by X-ray diffraction measurements. The amorphous structure was thermal stable, even after annealing at 600℃ for 30 minutes in an Ar ambient. The atomic composition of the film was identified as Ti:Si:N=1:0.6:1.6. The films were found to be under tensile stress of 0.3 GPa. The resistivity is about 0.5mΩcm at room temperature. The diffusion barrier characteristics were evaluated by n^+/p and p^+/n junction leakage measurements. No degradation of leakage characteristics was observed for these diodes, even after annealing at 600℃ for 30 minutes in an N_2/H_2 ambient. The amorphous Ti-Si-N barrier metal is a promising candidate for application in deep-submicron high-speed ULSIs.
- 社団法人電子情報通信学会の論文
- 1996-04-25
著者
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IIJIMA Tadashi
ULSI Research Laboratories, TOSHIBA Corporation
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SHIMOOKA Yoshiaki
ULSI Research Laboratories, TOSHIBA Corporation
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SUGURO Kyoichi
ULSI Research Laboratories, TOSHIBA Corporation
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Iijima Tadashi
Microelectronics Engineering Lab. Toshiba Corporation
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Suguro K
Toshiba Corporation Semiconductor Company
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Suguro Kyoichi
Ulsi Research Center Toshiba Corporation
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SHIMOOKA Yoshiaki
Microelectronics Engineering Lab., Toshiba Corporation
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Shimooka Yoshiaki
Microelectronics Engineering Lab. Toshiba Corporation
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Suguro Kyoichi
Toshiba Corporation Semiconductor Company
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