Intrinsic Junction Leakage Generated by Cobalt In-Diffusion during CoSi_2 Formation

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 2002-04-30

著者

• OHUCHI Kazuya

  System LSI Research & Development Center, Toshiba Corporation Semiconductor Company

• Ohuchi Kimihiro

  System Lsi Research & Development Center Semiconductor Company Toshiba Corporation

• Takashima Akira

  Corporate Research & Development Center Toshiba Corporation

• TSUCHIAKI Masakatsu

  Corporate Research & Development Center, Toshiba Corporation

• HONGO Chie

  Corporate Research & Development Center, Toshiba Corporation

• Hongo Chie

  Corporate Research & Development Center Toshiba Corporation

関連論文

• Ultrashallow Junction Formation for Sub-100nm Complementary Metal-Oxide-Semiconductor Field-Effect Transistor by Controlling Transient Enhanced Diffusion
• Intrinsic Junction Leakage Generated by Cobalt In-Diffusion during CoSi_2 Formation
• Influence of Reactive Ion Etching Applied to Si Substrate on Epitaxial Si Growth and Its Removal
• Facet-Free Si Selective Epitaxial Growth Adaptable to Elevated Source/Drain MOSFETs with Narrow Shallow Trench Isolation
• Facet-Free Si Selective Epitaxial Growth Adaptable to Elevated Source/Drain MOSFETs with Narrow STI
• Intrinsic Junction Leakage by Co In-Diffusion during CoSi_2 Formation Characterized with Damage Free n+/p Silicon Diodes
• Leakage Reduction by Thermal Annealing of NiPtSi Silicided Junctions and Anomalous Grain-Incompatible Pt Network
• Junction Leakage Generation by NiSi Thermal Instability Characterized Using Damage-Free n+/p Silicon Diodes
• Nonthermal Influence of Microwave Power on Chemical Reactions
• Impacts of Si Crystal Orientation on NiSi Silicided Junction Leakage Induced by Anisotropic Ni Migration
• Impacts of Fluorine and Nitrogen Incorporation on NiSi Induced Junction Leakage on Si(110) Substrate
• Substrate Orientation Dependence of NiSi Silicided Junction Leakage Induced by Anisotropic Ni Migration in Crystal Si
• Suppression of Thermally Induced Leakage of NiSi-Silicided Shallow Junctions by Pre-Silicide Fluorine Implantation
• Systematic Investigation of Leakage Suppression by Pre-Silicide Implantation for CoSi2 Formation on Shallow n+/p Si Diodes
• Substrate Orientation Dependent Suppression of NiSi Induced Junction Leakage by Fluorine and Nitrogen Incorporation

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