Impacts of Si Crystal Orientation on NiSi Silicided Junction Leakage Induced by Anisotropic Ni Migration

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概要

• 論文の詳細を見る
• 2006-09-13

著者

• TSUCHIAKI Masakatsu

  Corporate Research & Development Center, Toshiba Corporation

• Nishiyama Akira

  Corporate Research & Development Center Toshiba Corporation

関連論文

• Intrinsic Junction Leakage Generated by Cobalt In-Diffusion during CoSi_2 Formation
• Intrinsic Junction Leakage by Co In-Diffusion during CoSi_2 Formation Characterized with Damage Free n+/p Silicon Diodes
• Leakage Reduction by Thermal Annealing of NiPtSi Silicided Junctions and Anomalous Grain-Incompatible Pt Network
• Junction Leakage Generation by NiSi Thermal Instability Characterized Using Damage-Free n+/p Silicon Diodes
• Impacts of Si Crystal Orientation on NiSi Silicided Junction Leakage Induced by Anisotropic Ni Migration
• Impacts of Fluorine and Nitrogen Incorporation on NiSi Induced Junction Leakage on Si(110) Substrate
• Substrate Orientation Dependence of NiSi Silicided Junction Leakage Induced by Anisotropic Ni Migration in Crystal Si
• Suppression of Thermally Induced Leakage of NiSi-Silicided Shallow Junctions by Pre-Silicide Fluorine Implantation
• Systematic Investigation of Leakage Suppression by Pre-Silicide Implantation for CoSi2 Formation on Shallow n+/p Si Diodes
• Substrate Orientation Dependent Suppression of NiSi Induced Junction Leakage by Fluorine and Nitrogen Incorporation

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