TSUCHIAKI Masakatsu | Corporate Research & Development Center, Toshiba Corporation
スポンサーリンク
概要
関連著者
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TSUCHIAKI Masakatsu
Corporate Research & Development Center, Toshiba Corporation
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Nishiyama Akira
Corporate Research & Development Center Toshiba Corporation
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OHUCHI Kazuya
System LSI Research & Development Center, Toshiba Corporation Semiconductor Company
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HONGO Chie
Corporate Research & Development Center, Toshiba Corporation
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Ohuchi Kimihiro
System Lsi Research & Development Center Semiconductor Company Toshiba Corporation
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Hongo Chie
Corporate Research & Development Center Toshiba Corporation
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Ohuchi Kazuya
System Lsi Research & Development Center Toshiba Semiconductor Company
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Takashima Akira
Corporate Research & Development Center Toshiba Corporation
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Tsuchiaki Masakatsu
Corporate Research & Development Center Toshiba Corporation
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Murakoshi Atsushi
Process & Manufacturing Engineering Center, Toshiba Corporation Semiconductor Company
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Ohuchi Kazuya
System LSI Research & Development Center, Semiconductor Company, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Nishiyama Akira
Corporate Research & Development Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Hongo Chie
Corporate Research & Development Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Tsuchiaki Masakatsu
Corporate Research & Development Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Tsuchiaki Masakatsu
Corporate Research and Development Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Masakatsu Tsuchiaki
Corporate Research & Development Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-0032, Japan
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Murakoshi Atsushi
Process & Manufacturing Engineering Center, Toshiba Semiconductor Company, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Nishiyama Akira
Corporate Research and Development Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
著作論文
- Intrinsic Junction Leakage Generated by Cobalt In-Diffusion during CoSi_2 Formation
- Intrinsic Junction Leakage by Co In-Diffusion during CoSi_2 Formation Characterized with Damage Free n+/p Silicon Diodes
- Leakage Reduction by Thermal Annealing of NiPtSi Silicided Junctions and Anomalous Grain-Incompatible Pt Network
- Junction Leakage Generation by NiSi Thermal Instability Characterized Using Damage-Free n+/p Silicon Diodes
- Impacts of Si Crystal Orientation on NiSi Silicided Junction Leakage Induced by Anisotropic Ni Migration
- Impacts of Fluorine and Nitrogen Incorporation on NiSi Induced Junction Leakage on Si(110) Substrate
- Substrate Orientation Dependence of NiSi Silicided Junction Leakage Induced by Anisotropic Ni Migration in Crystal Si
- Suppression of Thermally Induced Leakage of NiSi-Silicided Shallow Junctions by Pre-Silicide Fluorine Implantation
- Systematic Investigation of Leakage Suppression by Pre-Silicide Implantation for CoSi2 Formation on Shallow n+/p Si Diodes
- Substrate Orientation Dependent Suppression of NiSi Induced Junction Leakage by Fluorine and Nitrogen Incorporation