Suppression of Thermally Induced Leakage of NiSi-Silicided Shallow Junctions by Pre-Silicide Fluorine Implantation

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概要

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• Thermally unstable NiSi films on shallow junctions induce a large leakage current upon heat treatment. To improve their thermal stability, using damage-free junctions formed by solid-phase diffusion, a sensitive and comparative investigation is conducted on the efficacy of pre-silicide ion implantation (PSII) of fluorine and nitrogen. After annealing NiSi silicided junctions, the basic and systematic monitoring of thermally induced leakage revealed that leakage suppression strongly depends on the element being implanted, i.e., F-PSII is found to be markedly superior to N-PSII. Even at a low F dosage, F-PSII attains a uniform and efficient leakage suppression of up to 6 orders of magnitude. Furthermore, unlike N-PSII, the suppression is achieved without any major disturbances to the critical characteristics of complementary metal-oxide-semiconductor transistors (CMOS) for ULSI application. The distinctive F presence around the NiSi/Si interface confers a substantial thermal stability to the NiSi film. The resulting effective blockage of Ni infiltration into a Si substrate, as well as the complete immobilization of Ni migration inside the Si substrate, leads to a drastic leakage suppression by F-PSII.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2005-04-15

著者

• OHUCHI Kazuya

  System LSI Research & Development Center, Toshiba Corporation Semiconductor Company

• TSUCHIAKI Masakatsu

  Corporate Research & Development Center, Toshiba Corporation

• Nishiyama Akira

  Corporate Research & Development Center Toshiba Corporation

• Ohuchi Kazuya

  System LSI Research & Development Center, Semiconductor Company, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan

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• Leakage Reduction by Thermal Annealing of NiPtSi Silicided Junctions and Anomalous Grain-Incompatible Pt Network
• Junction Leakage Generation by NiSi Thermal Instability Characterized Using Damage-Free n+/p Silicon Diodes
• Impacts of Si Crystal Orientation on NiSi Silicided Junction Leakage Induced by Anisotropic Ni Migration
• Impacts of Fluorine and Nitrogen Incorporation on NiSi Induced Junction Leakage on Si(110) Substrate
• Substrate Orientation Dependence of NiSi Silicided Junction Leakage Induced by Anisotropic Ni Migration in Crystal Si
• Suppression of Thermally Induced Leakage of NiSi-Silicided Shallow Junctions by Pre-Silicide Fluorine Implantation
• Systematic Investigation of Leakage Suppression by Pre-Silicide Implantation for CoSi2 Formation on Shallow n+/p Si Diodes
• Substrate Orientation Dependent Suppression of NiSi Induced Junction Leakage by Fluorine and Nitrogen Incorporation

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