Leakage Reduction by Thermal Annealing of NiPtSi Silicided Junctions and Anomalous Grain-Incompatible Pt Network

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概要

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• Using highly reliable damage-free junctions, the effectiveness and limitation of Pt addition for the stabilization of thin NiSi films are accurately specified and practically formulated in terms of the thermally induced leakage. In addition to the thermal leakage, the unexpected emergence of initial leakage is also witnessed and attributed to the emission of Si interstitials during silicidation and the subsequent formation of boron interstitial clusters. Rapid evanescence of the initial leakage by post-annealing is also successfully demonstrated owing to the Pt-induced thermal stabilization. Moreover, unlike other Pt distributions considered so far, Pt atoms are revealed to concentrate in a distinctive manner, forming an anomalous in-layer web-like structure which even extends within single NiSi grains. This grain-incompatible Pt network is thought to be a remnant of Pt-aggregation around grain boundaries of an earlier metal-rich silicide phase (e.g., Ni2Si), incorporated and left intact in the final phase (i.e., NiSi). Such intermediate-phase Pt-rearrangement may have interfered with the phase transition sequence and reoriented the final NiSi grains to constitute a crystallographically stable and thermally robust interface structure, resulting in the effective stabilization by Pt addition.

• 2010-04-25

著者

• TSUCHIAKI Masakatsu

  Corporate Research & Development Center, Toshiba Corporation

• Nishiyama Akira

  Corporate Research & Development Center Toshiba Corporation

• Masakatsu Tsuchiaki

  Corporate Research & Development Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-0032, Japan

関連論文

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• Intrinsic Junction Leakage by Co In-Diffusion during CoSi_2 Formation Characterized with Damage Free n+/p Silicon Diodes
• Leakage Reduction by Thermal Annealing of NiPtSi Silicided Junctions and Anomalous Grain-Incompatible Pt Network
• Junction Leakage Generation by NiSi Thermal Instability Characterized Using Damage-Free n+/p Silicon Diodes
• Impacts of Si Crystal Orientation on NiSi Silicided Junction Leakage Induced by Anisotropic Ni Migration
• Impacts of Fluorine and Nitrogen Incorporation on NiSi Induced Junction Leakage on Si(110) Substrate
• Substrate Orientation Dependence of NiSi Silicided Junction Leakage Induced by Anisotropic Ni Migration in Crystal Si
• Suppression of Thermally Induced Leakage of NiSi-Silicided Shallow Junctions by Pre-Silicide Fluorine Implantation
• Systematic Investigation of Leakage Suppression by Pre-Silicide Implantation for CoSi2 Formation on Shallow n+/p Si Diodes
• Substrate Orientation Dependent Suppression of NiSi Induced Junction Leakage by Fluorine and Nitrogen Incorporation

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