Substrate Orientation Dependent Suppression of NiSi Induced Junction Leakage by Fluorine and Nitrogen Incorporation

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概要

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• Using n+/p junctions formed by solid-phase diffusion, the efficacy of pre-silicide ion implantation (PSII) of fluorine and nitrogen on Si(110) for suppressing thermally induced leakage through NiSi-silicided shallow diodes is thoroughly examined in full contrast with Si(100). Unlike Si(100), N-PSII's efficiency improves on Si(110) over F-PSII. Furthermore, whereas in-film F has no ability to reduce leakage, in-film N suppresses leakage. Thus, N-PSII's leakage suppression is speculated to be mainly due to stabilization by N of abundant grain boundaries of highly oriented and finely structured NiSi films on Si(110), whereas leakage reduction by F-PSII is attained primarily by passivating the incoherent and unstable NiSi/Si(100) interface. From a practical point of view, in-film N incorporation offers a useful and complementary means of leakage suppression on Si(110) besides F-PSII, without any disturbance in contact resistance. Considering the vulnerability of Si(110) to light ion channeling, the best way to suppress leakage on a hybrid orientation substrate is a low-dose or selective F-PSII just prior to silicidation for Si(100), complemented by damage-free N doping or high-dose N-PSII together with source/drain implantation for Si(110).

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2008-04-25

著者

• TSUCHIAKI Masakatsu

  Corporate Research & Development Center, Toshiba Corporation

• Nishiyama Akira

  Corporate Research & Development Center Toshiba Corporation

• Tsuchiaki Masakatsu

  Corporate Research and Development Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan

• Nishiyama Akira

  Corporate Research and Development Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan

関連論文

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• Intrinsic Junction Leakage by Co In-Diffusion during CoSi_2 Formation Characterized with Damage Free n+/p Silicon Diodes
• Leakage Reduction by Thermal Annealing of NiPtSi Silicided Junctions and Anomalous Grain-Incompatible Pt Network
• Junction Leakage Generation by NiSi Thermal Instability Characterized Using Damage-Free n+/p Silicon Diodes
• Impacts of Si Crystal Orientation on NiSi Silicided Junction Leakage Induced by Anisotropic Ni Migration
• Impacts of Fluorine and Nitrogen Incorporation on NiSi Induced Junction Leakage on Si(110) Substrate
• Substrate Orientation Dependence of NiSi Silicided Junction Leakage Induced by Anisotropic Ni Migration in Crystal Si
• Suppression of Thermally Induced Leakage of NiSi-Silicided Shallow Junctions by Pre-Silicide Fluorine Implantation
• Systematic Investigation of Leakage Suppression by Pre-Silicide Implantation for CoSi2 Formation on Shallow n+/p Si Diodes
• Substrate Orientation Dependent Suppression of NiSi Induced Junction Leakage by Fluorine and Nitrogen Incorporation

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