Systematic Investigation of Leakage Suppression by Pre-Silicide Implantation for CoSi2 Formation on Shallow n+/p Si Diodes
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概要
- 論文の詳細を見る
Using simple and damage-free n+/p Si diodes, a sensitive and comparative investigation is conducted on the suppression of CoSi2-induced leakage by ion implantation just before silicidation (pre-silicide ion implantation: PSII). Avoiding high dose implantation, junctions are formed by solid phase diffusion. These junctions allow basic and systematic monitoring of PSII's intrinsic ability to suppress leakage. It is revealed that PSII suppresses junction leakage uniformly without causing any silicide spikes. It is also confirmed that PSII substantially reduces cobalt in-diffusion. Moreover, leakage suppression strongly depends on the element being implanted, i.e., As-PSII is found to be greatly superior to Ge-PSII. Furthermore, it is discovered that the presence of oxygen facilitates this advantage of arsenic. Combining these two factors, i.e., by As-PSII through an oxide, leakage suppression up to 4 orders of magnitude is attained.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-04-15
著者
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TSUCHIAKI Masakatsu
Corporate Research & Development Center, Toshiba Corporation
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HONGO Chie
Corporate Research & Development Center, Toshiba Corporation
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Murakoshi Atsushi
Process & Manufacturing Engineering Center, Toshiba Corporation Semiconductor Company
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Hongo Chie
Corporate Research & Development Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Tsuchiaki Masakatsu
Corporate Research & Development Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Murakoshi Atsushi
Process & Manufacturing Engineering Center, Toshiba Semiconductor Company, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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