Ohuchi Kazuya | System LSI Research & Development Center, Semiconductor Company, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan

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概要

• Ohuchi Kazuyaの詳細を見る
• 同名の論文著者
• System LSI Research & Development Center, Semiconductor Company, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japanの論文著者

関連著者

• OHUCHI Kazuya

  System LSI Research & Development Center, Toshiba Corporation Semiconductor Company

• TSUCHIAKI Masakatsu

  Corporate Research & Development Center, Toshiba Corporation

• Nishiyama Akira

  Corporate Research & Development Center Toshiba Corporation

• Ohuchi Kazuya

  System LSI Research & Development Center, Semiconductor Company, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan

著作論文

• Suppression of Thermally Induced Leakage of NiSi-Silicided Shallow Junctions by Pre-Silicide Fluorine Implantation

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