HONGO Chie | Corporate Research & Development Center, Toshiba Corporation
スポンサーリンク
概要
関連著者
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TSUCHIAKI Masakatsu
Corporate Research & Development Center, Toshiba Corporation
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HONGO Chie
Corporate Research & Development Center, Toshiba Corporation
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OHUCHI Kazuya
System LSI Research & Development Center, Toshiba Corporation Semiconductor Company
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Ohuchi Kimihiro
System Lsi Research & Development Center Semiconductor Company Toshiba Corporation
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Hongo Chie
Corporate Research & Development Center Toshiba Corporation
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Takashima Akira
Corporate Research & Development Center Toshiba Corporation
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Murakoshi Atsushi
Process & Manufacturing Engineering Center, Toshiba Corporation Semiconductor Company
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Hongo Chie
Corporate Research & Development Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Tsuchiaki Masakatsu
Corporate Research & Development Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Murakoshi Atsushi
Process & Manufacturing Engineering Center, Toshiba Semiconductor Company, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
著作論文
- Intrinsic Junction Leakage Generated by Cobalt In-Diffusion during CoSi_2 Formation
- Junction Leakage Generation by NiSi Thermal Instability Characterized Using Damage-Free n+/p Silicon Diodes
- Systematic Investigation of Leakage Suppression by Pre-Silicide Implantation for CoSi2 Formation on Shallow n+/p Si Diodes