Mechanism of Highly Selective SiO_2 to Si_3N_4 Etching Using C_4F_8 + CO Magnetron Plasma

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概要

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• Highly selective SiO_2 to Si_3N_4 etching was achieved using C_4F_8 + CO magnetron plasma when the CO gas-mixing ratio exceeded 75%. The analyses of fluorocarbon radicals hut the plasma showed a higher carbon-to-fluorine ratio with increasing CO ratio. In particular, a drastic increase in the C radicals was observed, which corresponded to the increase in electron density. The reaction mechanism of CO in the C_4F_8 + CO plasma was investigated utilizing CO composed of the ^<13>C isotope. CO supplied the carbon by electron-impact dissociation and scavenged fluorine by forming COF_x. The carbon-implanted Si_3N_4 film clarified the role of carbon on Si_3N_4 etching. The decrease in the Si_3N_4 etching rate and the increase in the fluorocarbon film thickness on true surface were observed with increasing carbon dose. CO addition thus realizes the high selectivity to Si_3N_4 in SiO_2 etching.

• 社団法人応用物理学会の論文
• 1999-08-15

著者

• Sekine Makoto

  Microelectronics Engineering Lab. Toshiba Corporation

• Hayashi Hisataka

  Microelectronics Engineering Lab. Toshiba Corporation

関連論文

• Mechanism of Etch Stop in High Aspect-Ratio Contact Hole Etching
• Influence of Reactive Ion Etching Applied to Si Substrate on Epitaxial Si Growth and Its Removal
• Fabrication of Capillary Plate with Sub-Micron Holes for Investigating High-Aspect-Ratio Etching Characteristics
• Mechanism of Highly Selective SiO_2 to Si_3N_4 Etching Using C_4F_8 + CO Magnetron Plasma

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