Mechanism of Etch Stop in High Aspect-Ratio Contact Hole Etching
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概要
- 論文の詳細を見る
- 1998-09-15
著者
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Kojima Akihiro
Process And Manufacturing Engineering Center Semiconductor Company Toshiba Corporation
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Watanabe Y
Ntt Basic Res. Lab. Kanagawa Jpn
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Ohiwa Tokuhisa
Microelectronics Engineering Laboratory Toshiba Corporation Semiconductor Company
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Sakai I
Process And Manufacturing Engineering Center Semiconductor Company Toshiba Corporation
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Sekine Makoto
Microelectronics Engineering Lab. Toshiba Corporation
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Kojima Akihiro
Microelectronics Engineering Labs. Toshiba Corporation
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Ohiwa Tokuhisa
Microelectronics Engineering Labs. Toshiba Corporation
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SAKAI Itsuko
Microelectronics Engineering Labs., Toshiba Corporation
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YONEMOTO Shigeru
Semiconductor Group, Toshiba Corporation
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WATANABE Yumi
Microelectronics Engineering Labs., Toshiba Corporation
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Sekine Makoto
Microelectronics Engineering Labs. Toshiba Corporation
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Watanabe Yumi
Microelectronics Engineering Labs. Toshiba Corporation
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Yonemoto Shigeru
Semiconductor Group Toshiba Corporation
関連論文
- Highly Selective Si_3N_4/SiOC Etching Using Dual Frequency Superimposed RF Capacitively Coupled Plasma
- Mechanism of Etch Stop in High Aspect-Ratio Contact Hole Etching
- Influence of Reactive Ion Etching Applied to Si Substrate on Epitaxial Si Growth and Its Removal
- Fabrication of Capillary Plate with Sub-Micron Holes for Investigating High-Aspect-Ratio Etching Characteristics
- Sub-45 nm SiO2 Etching with Stacked-Mask Process Using High-Bias-Frequency Dual-Frequency-Superimposed RF Capacitively Coupled Plasma
- Highly Selective Si3N4/SiOC Etching Using Dual Frequency Superimposed RF Capacitively Coupled Plasma
- Dual-Frequency Superimposed RF Capacitive-Coupled Plasma Etch Process
- Organic Film Reactive Ion Etching Using 100 MHz rf Capacitive Coupled Plasma
- Mechanism of Highly Selective SiO_2 to Si_3N_4 Etching Using C_4F_8 + CO Magnetron Plasma