Sub-45 nm SiO2 Etching with Stacked-Mask Process Using High-Bias-Frequency Dual-Frequency-Superimposed RF Capacitively Coupled Plasma
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概要
- 論文の詳細を見る
By using a stacked mask process (S-MAP) with spun-on-carbon (SOC) film, 38 nm line patterns were successfully etched by controlling the ion energy using high-bias-frequency dual-frequency-superimposed (DFS) rf capacitively coupled plasma in combination with the low hydrogen content SOC film. It was found that ions with higher energy enhance the fluorination of SOC and induce pattern wiggling under fluorine exposure. By using a higher bias frequency to control the ion energy distribution and reduce the maximum ion energy, the SOC pattern wiggling was effectively suppressed.
- 2008-10-25
著者
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Kojima Akihiro
Process And Manufacturing Engineering Center Semiconductor Company Toshiba Corporation
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ABE Junko
Process & Manufacturing Engineering Center, Toshiba Corporation Semiconductor Company
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HAYASHI Hisataka
Process & Manufacturing Engineering Center, Toshiba Corporation Semiconductor Company
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OHIWA Tokuhisa
Process & Manufacturing Engineering Center, Toshiba Corporation Semiconductor Company
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Ohashi Takashi
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation, Yokohama 235-8522, Japan
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Abe Junko
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation, Yokohama 235-8522, Japan
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Sakai Itsuko
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation, Yokohama 235-8522, Japan
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Sakai Itsuko
Process & Manufacturing Engineering Center, Toshiba Corporation Semiconductor Company, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Kikutani Keisuke
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation, Yokohama 235-8522, Japan
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Ui Akio
Mechanical Systems Laboratory, Corporate Research and Development Center, Toshiba Corporation, Kawasaki 212-8582, Japan
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Hayashi Hisataka
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation, Yokohama 235-8522, Japan
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Ohiwa Tokuhisa
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation, Yokohama 235-8522, Japan
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Kojima Akihiro
Process & Manufacturing Engineering Center, Toshiba Corporation Semiconductor Company, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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- Sub-45 nm SiO2 Etching with Stacked-Mask Process Using High-Bias-Frequency Dual-Frequency-Superimposed RF Capacitively Coupled Plasma
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