Highly Selective Si_3N_4/SiOC Etching Using Dual Frequency Superimposed RF Capacitively Coupled Plasma
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概要
- 論文の詳細を見る
- 2006-07-15
著者
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Kojima Akihiro
Process And Manufacturing Engineering Center Semiconductor Company Toshiba Corporation
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HAYASHI Hisataka
Process & Manufacturing Engineering Center, Toshiba Corporation Semiconductor Company
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OHIWA Tokuhisa
Process & Manufacturing Engineering Center, Toshiba Corporation Semiconductor Company
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Takase Akihiro
Process And Manufacturing Engineering Center Semiconductor Company Toshiba Corporation
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NISHIWAKI Junya
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation
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YAMAMOTO Katsumi
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation
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SAKAI Itsuko
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation
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