Sub-55 nm Etch Process Using Stacked-Mask Process
スポンサーリンク
概要
- 論文の詳細を見る
Using a stacked mask process (S-MAP) with spun-on carbon (SOC) film, 56 nm line and space patterns of SiO2 were successfully etched. It was found that deformation of the SOC line pattern which occurred at line dimensions under 60 nm during SiO2 reactive ion etching (RIE) using fluorocarbon gas, originates from fluorination of the SOC film. By decreasing the hydrogen content of the SOC film, this cause of line pattern deformation was suppressed effectively.
- 2007-07-15
著者
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ABE Junko
Process & Manufacturing Engineering Center, Toshiba Corporation Semiconductor Company
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HAYASHI Hisataka
Process & Manufacturing Engineering Center, Toshiba Corporation Semiconductor Company
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OHIWA Tokuhisa
Process & Manufacturing Engineering Center, Toshiba Corporation Semiconductor Company
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Onishi Yasunobu
Process & Manufacturing Engineering Center Semiconductor Company Toshiba Corporation
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SAKAI Itsuko
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation
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Kato Hirokazu
Process & Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Kato Hirokazu
Process & Manufacturing Engineering Center, Toshiba Corporation Semiconductor Company, Yokohama 235-8522, Japan
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Taniguchi Yasuyuki
Process & Manufacturing Engineering Center, Toshiba Corporation Semiconductor Company, Yokohama 235-8522, Japan
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Abe Junko
Process & Manufacturing Engineering Center, Toshiba Corporation Semiconductor Company, Yokohama 235-8522, Japan
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Sakai Itsuko
Process & Manufacturing Engineering Center, Toshiba Corporation Semiconductor Company, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Sakai Itsuko
Process & Manufacturing Engineering Center, Toshiba Corporation Semiconductor Company, Yokohama 235-8522, Japan
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Taniguchi Yasuyuki
Process & Manufacturing Engineering Center, Toshiba Corporation Semiconductor Company, Yokohama 235-8522, Japan
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Hayashi Hisataka
Process & Manufacturing Engineering Center, Toshiba Corporation Semiconductor Company, Yokohama 235-8522, Japan
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Ohiwa Tokuhisa
Process & Manufacturing Engineering Center, Toshiba Corporation Semiconductor Company, Yokohama 235-8522, Japan
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Onishi Yasunobu
Process & Manufacturing Engineering Center, Toshiba Corporation Semiconductor Company, Yokohama 235-8522, Japan
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