Application of Electron Beam Cured Spin-On Glass to Trilevel Resist System for Deep and Vacuum Ultraviolet Lithography
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概要
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Spin-on glass (SOG) has been used as the middle layer for a trilevel resist system. A conventional SOG film is porous, which results in the deterioration of the resist pattern due to the diffusion of acid in the resist to SOG and poor etch resistance during under-resist etching. In this paper, in order to solve these drawbacks, electron beam (EB) cure was applied to densify the SOG film. The film density of SOG is increased from 1.87 g/cm3 to 2.07 g/cm3 by EB cure. The Fourier-transform infrared spectroscopy (FT-IR) shows that EB cure cross-links silanol moieties to each other by a dehydration reaction. The positive chemically amplified resist is vertically patterned on the EB cured SOG without footing. The etch rate of EB cured SOG under under-resist etch condition reduced by 36% compared with that of SOG before EB cure.
- 2003-06-15
著者
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ABE Junko
Process & Manufacturing Engineering Center, Toshiba Corporation Semiconductor Company
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HAYASHI Hisataka
Process & Manufacturing Engineering Center, Toshiba Corporation Semiconductor Company
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Sato Yasuhiko
Process & Manufacturing Engineering Center Toshiba Corporation Semiconductor Company
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Abe Junko
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Hayashi Hisataka
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Shibata Tsuyoshi
Process & Manufacturing Engineering Center, Toshiba Corporation Semiconductor Company, 8 Shinsugita-cho, Isogo-ku, Yokohama, Kanagawa 235-8522, Japan
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Shibata Tsuyoshi
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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