Kojima Akihiro | Process And Manufacturing Engineering Center Semiconductor Company Toshiba Corporation
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概要
関連著者
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Kojima Akihiro
Process And Manufacturing Engineering Center Semiconductor Company Toshiba Corporation
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HAYASHI Hisataka
Process & Manufacturing Engineering Center, Toshiba Corporation Semiconductor Company
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OHIWA Tokuhisa
Process & Manufacturing Engineering Center, Toshiba Corporation Semiconductor Company
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Sakai Itsuko
Process & Manufacturing Engineering Center, Toshiba Corporation Semiconductor Company, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Kojima Akihiro
Process & Manufacturing Engineering Center, Toshiba Corporation Semiconductor Company, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Takase Akihiro
Process And Manufacturing Engineering Center Semiconductor Company Toshiba Corporation
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YAMAMOTO Katsumi
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation
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SAKAI Itsuko
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation
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Nishiwaki Junya
Process And Manufacturing Engineering Center Semiconductor Company Toshiba Corporation
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Shinomiya Eiichiro
Process & Manufacturing Engineering Center, Toshiba Corporation Semiconductor Company, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Watanabe Y
Ntt Basic Res. Lab. Kanagawa Jpn
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ABE Junko
Process & Manufacturing Engineering Center, Toshiba Corporation Semiconductor Company
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Ohiwa Tokuhisa
Microelectronics Engineering Laboratory Toshiba Corporation Semiconductor Company
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NISHIWAKI Junya
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation
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Sakai I
Process And Manufacturing Engineering Center Semiconductor Company Toshiba Corporation
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Sekine Makoto
Microelectronics Engineering Lab. Toshiba Corporation
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Kojima Akihiro
Microelectronics Engineering Labs. Toshiba Corporation
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Ohiwa Tokuhisa
Microelectronics Engineering Labs. Toshiba Corporation
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SAKAI Itsuko
Microelectronics Engineering Labs., Toshiba Corporation
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YONEMOTO Shigeru
Semiconductor Group, Toshiba Corporation
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WATANABE Yumi
Microelectronics Engineering Labs., Toshiba Corporation
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Sekine Makoto
Microelectronics Engineering Labs. Toshiba Corporation
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Watanabe Yumi
Microelectronics Engineering Labs. Toshiba Corporation
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Yonemoto Shigeru
Semiconductor Group Toshiba Corporation
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Nishiwaki Junya
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Nishiwaki Junya
Process and Manufacturing Engineering Center, Toshiba Corporation Semiconductor Company, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Yashiro Jun
Etch Systems B. U. Tokyo Electron AT Ltd., 2381-1 Kitagejo, Fujii-cho, Nirasaki, Yamanashi 407-8511, Japan
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Yamamoto Katsumi
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Ohmura Mitsuhiro
Process and Manufacturing Engineering Center, Toshiba Corporation Semiconductor Company, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Matsushita Takaya
Process and Manufacturing Engineering Center, Toshiba Corporation Semiconductor Company, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Shinomiya Eiichiro
Process and Manufacturing Engineering Center, Toshiba Corporation Semiconductor Company, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Himori Shinji
Etch Systems B. U. Tokyo Electron AT Ltd., 2381-1 Kitagejo, Fujii-cho, Nirasaki, Yamanashi 407-8511, Japan
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Nagaseki Kazuya
Etch Systems B. U. Tokyo Electron AT Ltd., 2381-1 Kitagejo, Fujii-cho, Nirasaki, Yamanashi 407-8511, Japan
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Ohashi Takashi
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation, Yokohama 235-8522, Japan
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Abe Junko
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation, Yokohama 235-8522, Japan
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Sakai Itsuko
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Sakai Itsuko
Process and Manufacturing Engineering Center, Toshiba Corporation Semiconductor Company, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Sakai Itsuko
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation, Yokohama 235-8522, Japan
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Kikutani Keisuke
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation, Yokohama 235-8522, Japan
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Ui Akio
Mechanical Systems Laboratory, Corporate Research and Development Center, Toshiba Corporation, Kawasaki 212-8582, Japan
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Hayashi Hisataka
Process and Manufacturing Engineering Center, Toshiba Corporation Semiconductor Company, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Hayashi Hisataka
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation, Yokohama 235-8522, Japan
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Hayashi Hisataka
Process & Manufacturing Engineering Center, Toshiba Corporation Semiconductor Company, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Ohiwa Tokuhisa
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Ohiwa Tokuhisa
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation, Yokohama 235-8522, Japan
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Ohiwa Tokuhisa
Process & Manufacturing Engineering Center, Toshiba Corporation Semiconductor Company, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Takase Akihiro
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Takase Akihiro
Process and Manufacturing Engineering Center, Toshiba Corporation Semiconductor Company, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Kojima Akihiro
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
著作論文
- Highly Selective Si_3N_4/SiOC Etching Using Dual Frequency Superimposed RF Capacitively Coupled Plasma
- Mechanism of Etch Stop in High Aspect-Ratio Contact Hole Etching
- Sub-45 nm SiO2 Etching with Stacked-Mask Process Using High-Bias-Frequency Dual-Frequency-Superimposed RF Capacitively Coupled Plasma
- Highly Selective Si3N4/SiOC Etching Using Dual Frequency Superimposed RF Capacitively Coupled Plasma
- Dual-Frequency Superimposed RF Capacitive-Coupled Plasma Etch Process
- Organic Film Reactive Ion Etching Using 100 MHz rf Capacitive Coupled Plasma