Leakage mechanism of ultrathin SiON gate dielectric
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概要
- 論文の詳細を見る
- 2006-09-13
著者
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Matsushita Daisuke
Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation
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WATANABE Hiroshi
Advanced Science Research Center, Japan Atomic Energy Research Institute
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Muraoka Kouichi
Advanced Lsi Technology Labs Toshiba Corp.
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Muraoka Kouichi
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
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Matsushita Daisuke
Advanced Lsi Technology Labs Toshiba Corp.
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KATO Koichi
Advanced LSI Technology Laboratory, Corporate Research & Development Center, Toshiba Corporation
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Kato Koichi
Advanced Lsi Technology Labs Toshiba Corp.
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Kato Koichi
Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation
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Watanabe Hiroshi
Advanced Lsi Technology Labs Toshiba Corp.
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