Thermal Stability of Stacked High-k Dielectrics on Silicon and Its Improvement by Helium Annealing

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概要

• 論文の詳細を見る
• 2004-01-01

著者

• Muraoka Kouichi

  Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation

関連論文

• The Relation between Dielectric Constant and Film Composition of Ultra-Thin Silicon Oxynitride Films : Experimental Evaluation and Analysis of Nonlinearity
• Leakage mechanism of ultrathin SiON gate dielectric
• Determination of tunnel mass and thickness of gate oxide including poly-Si/SiO_2 and Si/SiO_2 interfacial transition layers
• Thermal Stability of Stacked High-k Dielectrics on Silicon and Its Improvement by Helium Annealing
• Suppression of Interfacial Reactions in Tungsten/Hafnia/Germanium Structures by Water Vapor Discharge
• Thermal Stability of Stacked high-κ Dielectrics on Silicon and Its Improvement by Helium Annealing(High-κ Gate Dielectrics)

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