Emergence of a Parallel Layout Arising from Users' Pursuits of Better Living Conditions of Their Dwelling Units in MRHC with MAS(Architectural Planning and Design)
スポンサーリンク
概要
- 論文の詳細を見る
This paper attempted to present a method to solve site-planning problems of the Multistory Row House Cluster (MRHC) with parallel layout by the Multi-Agent System (MAS). The solutions were generated entirely by the interactions of the agents, who represented the users in pursuit of better living conditions for their dwelling units. Thus, they are analogous to the "user-oriented" layout. The standard solution differed from the popular layout in Beijing in that the public Green Land (GL) was separated and located on the southeast and southwest corners of MRHC. Comparing a diversity of layouts, the solution showed the following characteristics: 1) the highest average level of living conditions of dwelling units; 2) the comparatively homogenous living conditions in dwelling units; and 3) the fewest dwelling units with poorly evaluated living conditions. In addition, this study also examined the relationships between the average living conditions in the solutions and the attributes of the plot, including the plot ratio and aspect ratio.
- 社団法人日本建築学会の論文
- 2004-05-15
著者
-
MATSUSHITA Daisuke
Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University
-
Matsushita Daisuke
Department Of Crystalline Materials Science Graduate School Of Engineering Nagoya University
-
Matsushita Daisuke
Department Of Architecture And Architectural Engineering Graduate School Of Engineering Kyoto Univer
-
Matsushita Daisuke
Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation
-
Munemoto J
Department Of Architecture And Architectural Engineering Graduate School Of Engineering Kyoto Univer
-
Han Mengzhen
Department of Architecture and Architectural Engineering, Graduate School of Engineering, Kyoto Univ
-
Munemoto Junzo
Department of Architecture and Architectural Engineering, Graduate School of Engineering, Kyoto Univ
-
Munemoto Junzo
Department Of Architecture And Architectural Engineering Graduate School Of Engineering Kyoto Univer
-
Han Mengzhen
Department Of Architecture And Architectural Engineering Graduate School Of Engineering Kyoto Univer
関連論文
- Growth Processes and Electrical Characteristics of Silicon Nitride Films Formed on Si(100) by Radical Nitrogen
- Structure of Ultrathin Epitaxial CeO_2 Films Grown on Si(111)
- Interactive Evolutionary Computation (IEC) Method of Interior Work (IW) Design for Use by Non-design-professional Chinese Residents(Architectural/Urban Planning and Design)
- Growth Processes and Electrical Characteristics of Silicon Nitride Films Formed on Si(100) by Radical Nitrogen
- High quality La aluminates/Si (100) interface realized by passivation of Si dangling bonds with one monolayer epitaxial SrSi_2
- Evaluation of Flexible Security Models on a Mobile Agent Platform
- Enhancement of Dielectric Constant due to Expansion of Lattice Spacing in CeO_2 Directly Grown on Si(111)
- Optimizing Parallel Layout of MRHC to Improve Quality of Views from Dwelling Units with Genetic Algorithm(Architectural/Urban Planning and Design)
- Emergence of a Parallel Layout Arising from Users' Pursuits of Better Living Conditions of Their Dwelling Units in MRHC with MAS(Architectural Planning and Design)
- A Study on Residents' Self-built Improvements as a Predictor of Their Intentions on Residential Mobility at MRB Dwelling Units in Metro Manila
- Relation between People's Evaluations on Living Conditions and Plan Locations of Dwelling Units in MFRHC with Parallel Layout in Beijing
- A Study on Residents' Self-built Improvements at MRB Dwelling Units in Metro Manila
- Invoking Household Cooperation in the Commons Dilemma of CO_2 Emission Reduction(Architectural/Urban Planning and Design)
- Housing Arrangements in Pursuit of Maximum GFA Under CO_2 Emission Constraint(Architectural/Urban Planning and Design)
- Atomic-Scale Characterization of Nitridation Processes on Si(100)-$2\times 1$ Surfaces by Radical Nitrogen
- Atomic Scale Characterization of Nitridation Process on Si(100)-2x1 Surfaces by Radical Nitrogen
- Leakage mechanism of ultrathin SiON gate dielectric
- Determination of tunnel mass and thickness of gate oxide including poly-Si/SiO_2 and Si/SiO_2 interfacial transition layers
- Structure of Ultrathin Epitaxial CeO2 Films Grown on Si(111)
- Prognostic factors in esophageal squamous cell carcinoma patients treated with neoadjuvant chemoradiation therapy