ONO Mizuki | Advanced LSI Technology Laboratory, Corporate Research & Development Center, Toshiba Corporation
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概要
- 同名の論文著者
- Advanced LSI Technology Laboratory, Corporate Research & Development Center, Toshiba Corporationの論文著者
関連著者
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Nishiyama Akira
Advanced LSI Technology Laboratory, Corporate R & D Center, Toshiba Corporation
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Nishiyama Akira
Advanced Lsi Technology Laboratory Corporate R & D Center Toshiba Corporation
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ONO Mizuki
Advanced LSI Technology Laboratory, Corporate Research & Development Center, Toshiba Corporation
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Ono Mizuki
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
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Koyama Masato
Advanced LSI Technology Laboratory, Corporate R & D Center, Toshiba Corporation
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Nishiyama Akira
Department Of Pharmacology Kagawa University Medical School
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Nishiyama Akira
Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation
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Nishiyama Akira
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
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Ono M
Sony Corp. Tokyo Jpn
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Koyama Masato
Advanced Lsi Technology Laboratory Corporate R & D Center Toshiba Corporation
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Koyama Masato
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
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Kamata Yasushi
Methane Hydrate Research Laboratory National Institute Of Advanced Industrial Science And Technology
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KAMATA Yoshiki
Advanced LSI Technology Laboratory, Corporate Research & Development Center, Toshiba Corporation
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Ono Mizuki
Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation
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Kamata Yoshiki
Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation
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Nishiyama Akira
Faculty Of Medicine Department Of Pharmacology Kagawa University
著作論文
- Elevated Extension Structure for 35nm MOSFETs
- Elevated Extension Structure for 35nm MOSFETs
- Improved Performance of Schottky Barrier Source/Drain Transistors with High-K Gate Dielectrics by Adopting Recessed Channel and/or Buried Source/Drain Structures
- Degradation of Current Drivability of Schottky Source/Drain Transistors with High-k Gate Dielectrics and Possible Measures to Suppress the Phenomenon