Ge-Dot Formation on Si(111)-7 × 7 Surface with C Predeposition Using Monomethylsilane
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概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2005-02-10
著者
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SUEMITSU Maki
Center for Interdisciplinary Research, Tohoku University
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Endoh Tetsuo
Research Institute Of Electrical Communication Tohoku University
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Suemitsu Maki
Tohoku Univ. Sendai Jpn
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Suemitsu Maki
Center For Interdisciplinary Research Tohoku University
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Narita Yuzuru
Center For Interdisciplinary Research Tohoku University
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SAKAI Masashi
Center for Interdisciplinary Research, Tohoku University
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MURATA Takeshi
Center for Interdisciplinary Research, Tohoku University
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Sakai Masashi
Center For Interdisciplinary Research Tohoku University
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Murata Takeshi
Center For Interdisciplinary Research Tohoku University
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