Study of 30-nm Double-Gate MOSFET with Halo Implantation Technology Using a Two-Dimensional Device Simulator(Novel MOSFET Structures,<Special Section>Fundamentals and Applications of Advanced Semiconductor Devices)
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概要
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In this paper, the effect of Halo concentration on performance of 30nm gate length Double-Gate MOSFET with 30nm thin body-Si is investigated by using two dimensional device simulator. We quantitatively show the dependency of electrical characteristic (subthreshold-slope, threshold voltage: V_<th>, drivability and leak current: I_<on> and I_<off>) on the Halo concentration. This dependency can be explained by the reasons why the Halo concentration has directly effect on the potential distribution of the body. It is made clear that from viewpoint of body potential control, the design of Halo concentration is key technology for suppressing short-channel effect and improving subthreshold-slope, I_<on> and I_<off> adjusting the V_<th>.
- 社団法人電子情報通信学会の論文
- 2007-05-01
著者
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Endoh Tetsuo
Research Institute Of Electrical Communication Tohoku University
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Momma Yuto
Research Institute Of Electrical Communication Tohoku University
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